The surface conductivity influences the etched pattern profiles in the plasma process. In the
dielectric film etching, it is vital to reduce the charging build-up, which bends the trajectory of …

The fabrication of high aspect ratio Si trenches has been becoming difficult due to the
decrease in critical dimension (CD) to deep nanoscale. Especially, aspect ratio dependent …

Plasma etching effects, such as microtrenching and bowing, negatively impact device
performance. Modeling of these effects at nanoscale is challenging, and theoretical and …

The semiconductor industry is currently transitioning to advanced extreme-ultraviolet
lithography (EUVL) to address the challenges facing the use of photolithography in …

Ruthenium (Ru) is a next-generation metal interconnect material, and the demand for
precise etching is on the rise. This study explores anisotropic atomic layer etching (ALE) of …

In semiconductor device fabrication, the feature profiles of a high-aspect-ratio (HAR) Si
trench is needed to be controlled considering aspect-ratio-dependent etching (ARDE). This …

Plasma etching is an essential semiconductor manufacturing technology required to enable
the current microelectronics industry. Along with lithographic patterning, thin-film formation …

TiO 2 is a material used in various fields such as electronics, optics, environment, etc. For
the application to electronic and optical devices, TiO 2 needs to be patterned using reactive …

In this short review, the evolution of plasma etching technologies used in microelectronics
fabrication since the discovery of the reactive ion etching process 50 years ago is explored …

Asynchronous pulse-modulated plasma effect on the generation of abnormal high-energetic
electrons for the suppression of charge- Page 1 Asynchronous pulse-modulated plasma effect …