Dependence of high-speed properties on the number of quantum wells in 1.55 mu m InGaAs-InGaAsP MQW lambda/4-shifted DFB lasers

K Uomi, M Aoki, T Tsuchiya… - IEEE Journal of Quantum …, 1993 - ieeexplore.ieee.org
The dependence of intrinsic dynamic properties, such as relaxation oscillation frequency,
damping K-factor, and spectral chirping under 10-Gb/s direct modulation, on the number of …

New transmission simulation of EA-modulator integrated DFB-lasers considering the facet reflection-induced chirp

M Aoki, S Takashima, Y Fujiwara… - IEEE Photonics …, 1997 - ieeexplore.ieee.org
Influence of optical feedback-induced chirp on transmission performance of
electroabsorption-modulator integrated DFB lasers is simulated for the first time. The …

Advantage of 1.55 mu m InGaAs/InGaAsP MQW-DFB lasers for reducing waveform degradation and dispersion penalty for 2.5 Gb/s long-span normal fiber …

K Uomi, A Murata, S Sano, R Takeyari… - IEEE photonics …, 1992 - ieeexplore.ieee.org
The advantage of 1.55-mu m multiquantum-well (MQW) distributed-feedback (DFB) lasers
over conventional bulk lasers for normal fiber transmission is shown by evaluating the …

High-speed 1.55 μm InGaAs/InGaAsP multi-quantum well λ/4-shifted DFB lasers

K Uomi, M Aoki, T Tsuchiya, A Takai - Fiber & Integrated Optics, 1994 - Taylor & Francis
The high-speed modulation properties of 1.5 μm multiquantum-well λ/4-shifted DFB lasers
are filly reviewed. In particular, the dependence of intrinsic dynamic properties, such as …

Ultra-Fast Semiconductor Laser Sources

M Aoki, U Troppenz - Fibre Optic Communication: Key Devices, 2017 - Springer
The chapter focuses on ultra-fast light sources for achieving small footprint and lower-power-
consumption optical transceivers and covers various important light sources such as directly …

Extremely low-threshold 1.3-um strained-MQW lasers for parallel high-speed optical interconnections

K Uomi - Laser Diode Chip and Packaging Technology, 1996 - spiedigitallibrary.org
An ultralow-threshold 1.3-micrometer InGaAsP/InP ten-element monolithic laser array has
been grown on a p-InP substrate entirely by metal-organic vapor phase epitaxy. This was …

Extremely low power penalty in 2.5‐Gb/S transmission experiment using 1.55‐μm MQW‐DFB lasers with optimized QW number

M Kawano, T Aoyagi, H Watanabe… - Microwave and …, 1994 - Wiley Online Library
Abstract For 1.55‐μm MQW‐DFB lasers, the dependence of transmission characteristics
under 2.5‐Gb/s modulation on the number of wells is investigated experimentally and …

Ultrafast Semiconductor Laser Sources

M Aoki - Fibre Optic Communication: Key Devices, 2012 - Springer
This chapter reviews recent technological progress in the development of ultrafast light
sources for achieving small footprint and low-power consumption optical transceivers. The …