Quantum dot strain engineering of InAs∕ InGaAs nanostructures

L Seravalli, M Minelli, P Frigeri, S Franchi… - Journal of Applied …, 2007 - pubs.aip.org
We present a complete study both by experiments and by model calculations of quantum dot
strain engineering, by which a few optical properties of quantum dot nanostructures can be …

Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots

S Sanguinetti, M Padovani, M Gurioli, E Grilli… - Applied Physics …, 2000 - pubs.aip.org
A detailed study of the carrier transfer and photoluminescence (PL) quenching in stacked
InAs/GaAs quantum dots (QDs) is presented. Vertically aligned QD structures, grown by …

Investigation of populated InAs/GaAs quantum dots by photoluminescence and photoreflectance

JR Lee, CR Lu, WI Lee, SC Lee - Physica E: Low-dimensional Systems and …, 2005 - Elsevier
We studied self-assembled InAs/GaAs quantum dots by contrasting photoluminescence and
photoreflectance spectra from 10K to room temperature. The photoluminescence spectral …

Optical properties of InAs/AlyGa1− yAs/GaAs quantum dot structures

P Altieri, S Sanguinetti, M Gurioli, E Grilli… - Materials Science and …, 2002 - Elsevier
We present a detailed study, by means of photoluminescence measurements, of the optical
properties of self-assembled InAs/AlyGa1− yAs/GaAs quantum dot (QD) structures, grown by …

Disorder–induced localized states in InAs/GaAs multilayer quantum dots

M Gurioli, S Sanguinetti, E Grilli, M Guzzi… - Applied physics …, 2003 - pubs.aip.org
We have investigated in detail the dependence of the photoluminescence decay times in
stacked quantum dot (QD) structures, showing that they strongly depend on the emission …

Enhancement of the thermoelectric figure of merit in a quantum dot due to external ac field

Q Chen, Z Wang, ZX Xie - Physics Letters A, 2013 - Elsevier
We investigate the figure of merit of a quantum dot (QD) system irradiated with an external
microwave filed by nonequilibrium Greenʼs function (NGF) technique. Results show that the …

Photoreflectance spectroscopy of quantum dots

J Misiewicz, G Sęk, K Ryczko - Current Applied Physics, 2003 - Elsevier
We present a short review of applications of a contactless modulation spectroscopy called
photoreflectance (PR) to semiconductor quantum dots investigations. The derivative-like …

MESOSCOPIC TRANSPORT THROUGH A QUANTUM DOT–CARBON NANOTUBE SYSTEM IN AN APPLIED MICROWAVE FIELD

LN Zhao, HK Zhao - International Journal of Modern Physics B, 2004 - World Scientific
The coherent transport through a quantum-dot (QD) coupled with single-wall carbon
nanotubes (SWCNs) is investigated by employing the nonequilibrium Green's function …

Scanning electron filling modulation reflectance of charged InGaAs self-assembled quantum dot

TM Hsu, WH Chang, CY Lai, NT Yeh… - Journal of applied …, 2002 - pubs.aip.org
We present the scanning electron-filling modulation reflectance (SEFR) of charged In 0.5 Ga
0.5 As self-assembled quantum dots. The SEFR is performed by applying a small constant …

Modulation Spectroscopy and Surface Photovoltage Spectroscopy of Semiconductor Quantum Wires and Quantum Dots

FH Pollak - Nano-Optoelectronics: Concepts, Physics and Devices, 2002 - Springer
During the past decade there has been considerable fundamental and applied interest in
low dimensional semiconductor nanostructures such as quantum wires (QWRs) and …