Over recent decades, advancements in complementary metal-oxide-semiconductor
integrated circuits (ICs) have mainly relied on structural innovations in transistors. From …

Silicon transistors are approaching their physical limit, calling for the emergence of a
technological revolution. As the acknowledged ultimate version of transistor channels, 2D …

Abstract Quasi-one-dimensional (1D) semiconducting nanowires (NWs), with excellent
electrostatic control capability, are widely regarded as advantageous channels for the …

We report TCAD simulation studies on nanowire (NW), nanosheet (NS) and forksheet (FS)
FET hot-carrier relia-bility. The simulations entail i) solving the Boltzmann transport equation …

This study analyzes the single-event transient (SET) characteristics of alpha particles on
multi-channel Forksheet-FET and Nanosheet-FET at the device and circuit levels through 3D …

In every aspect of our life and society, semiconductors play a major role and that impact is
set to increase even further. The pandemic in conjunction with supply chain hiccups and …

The forksheet (FSH) device architecture is a possible candidate towards continued logic cell
downscaling. It consists of vertically stacked n-and p-type sheets at opposing sides of a …

With semiconductor scaling approaching the physical limits, devices including CMOS
(complementary metal-oxide-semiconductor) components have managed to overcome yet …

Nanosheet-based field-effect transistors with dielectric walls between adjacent devices,
referred to as forksheet transistors, can improve CMOS scaling by means of (1) space …

In this work, we investigate the effect of a Si separator on the performance of a bottom
dielectric isolated (BDI) forksheet field effect transistor (FSFET) using our in-house TCAD …