Conspectus Atomically precise and highly selective surface reactions are required for
advancing microelectronics fabrication. Advanced atomic processing approaches make use …

Atomic layer deposition (ALD) is a thin-film fabrication technique that has great potential in
nanofabrication. Based on its self-limiting surface reactions, ALD has excellent conformality …

Atomic-scale precision alignment is a bottleneck in the fabrication of next-generation
nanoelectronics. In this study, a redox-coupled inherently selective atomic layer deposition …

The 2022 Roadmap is the next update in the series of Plasma Roadmaps published by
Journal of Physics D with the intent to identify important outstanding challenges in the field of …

Area-selective atomic layer deposition (ALD) is an approach to self-aligned, bottom-up
nanofabrication with the potential to overcome many of the challenges facing the …

Using both experiment and density functional theory (DFT), we study a group of small
molecule inhibitors (SMIs) and aluminum precursors to determine how the interplay between …

Implementation of vapor/phase dosing of small molecule inhibitors (SMIs) in advanced
atomic layer deposition (ALD) cycles is currently being considered for bottom-up fabrication …

Atomic layer deposition (ALD) is well known as the most advanced coating technique so far
due to its unique deposition characteristics, such as uniformity and 3D conformality. ALD is …

A first‐of‐its‐kind area‐selective deposition process for SiO2 is developed consisting of film
deposition with interleaved exposures to small molecule inhibitors (SMIs) and back‐etch …

Selective deposition shows a great perspective for the downscaling of nanoelectronics. In
this work, inherently selective atomic layer deposition (ALD) of tantalum oxide was studied …