We propose a method to investigate the carrier transport properties in the ultrathin wetting
layer of a self-assembled quantum dot (QD) structure using low-voltage …

Many-body effects were studied in highly photoexcited CdSe quantum dots (QDs). The size
of the QDs was larger than the exciton Bohr radius in bulk CdSe crystals, so that the excitons …

We investigate the electron kinetics in quantum dot (QD) devices due to Coulomb scattering
with carriers in a remote, non-local quantum well or bulk contact region. Our numerical …

采用光致发光方法和纳米光谱成像技术, 研究了单个半导体量子点中激发态激子的Rabi 振荡.
观测了在两个延时位相可控的!/2 脉冲激发下, 激发态激子数随其量子比特位相旋转而振荡的 …

The interband optical transitions of InAs/InxGa1− xAs dots-in-a-well (DWELL) structure is
investigated theoretically and compared with experiment. The electronic structure was …

We report on magneto-photoluminescence studies of InAs/GaAs quantum dots (QDs) of
considerably different densities, from dense ensembles down to individual dots. It is found …

The decoherence of Rabi oscillation (RO) caused by biexciton, population leakage to the
wetting layer (WL), and Auger capture in semiconductor quantum dots is theoretically …

The chapter reviews ultrafast dynamics of carrier transfer into InAs/GaAs and InGaAs/GaAs
quantum dots of different doping, densities and interlevel energies. Results from theoretical …

摘要理论上分析了半导体量子点中浸润层跃迁(包括泄漏和俘获两个过程) 对Rabi
振荡退相干的影响, 含浸润层跃迁的粒子数运动方程可以很好地拟合实验结果 …

研究了脉冲激光激发下半导体量子点激子Rabi 振荡中多能级过程引起的退相干特性.
运用多能级粒子数运动方程组, 分别计算和分析了三种多能级过程(双激子, 浸润层泄漏以及俄歇 …