Coupled rate equation modeling of self-assembled quantum dot photoluminescence
FV De Sales, JMR Cruz, SW da Silva, MAG Soler… - Microelectronics …, 2003 - Elsevier
We have investigated the quantum dot (QD) carrier capture mechanism using continuous
wave photoluminescence as a function of the optical excitation intensity using a sample with …
wave photoluminescence as a function of the optical excitation intensity using a sample with …
Resonant Scattering and Energy Relaxation in Quantum Dot Systems
IA Larkin, A Vagov - Advances in Condensed Matter Physics, 2017 - Wiley Online Library
We propose a new Auger‐like mechanism for energy relaxation in quantum dots (QD) driven
by resonant scattering of delocalized wetting layer (WL) carriers. It is demonstrated that …
by resonant scattering of delocalized wetting layer (WL) carriers. It is demonstrated that …
Persistent Spectral hole burning in semiconductor quantum dots
Y Masumoto - … Quantum Dots: Physics, Spectroscopy and Applications, 2002 - Springer
Nanometer-size semiconductor crystals or semiconductor nanocrystals are known as zero-
dimensional quantum dots [1–6]. Their optical properties have been characterized by the …
dimensional quantum dots [1–6]. Their optical properties have been characterized by the …
Dynamics of carrier relaxation in self-assembled quantum dots
IV Ignatiev, IE Kozin - Semiconductor Quantum Dots: Physics …, 2002 - Springer
Relaxation of hot carriers in quantum dots (QDs) has been widely discussed since the
beginning of research of self-assembled QDs. Understanding of carrier relaxation …
beginning of research of self-assembled QDs. Understanding of carrier relaxation …
Enhancement of the photoluminescence intensity of a single InAs/GaAs quantum dot by separate generation of electrons and holes
V Donchev, ES Moskalenko, KF Karlsson… - Physics of the Solid …, 2006 - Springer
It is demonstrated that the microphotoluminescence (μPL) spectrum of a single InAs/GaAs
self-assembled quantum dot (QD) undergoes considerable changes when the primary laser …
self-assembled quantum dot (QD) undergoes considerable changes when the primary laser …
[PDF][PDF] Bistability and hysteresis in self-organised quantum dot structures
The hysteresis within the electron concentration versus gate voltage characteristic of a
GaAs/n-AlGaAs field effect transistor with InAs quantum dots [G. Yusa, H. Sakaki, Appl. Phys …
GaAs/n-AlGaAs field effect transistor with InAs quantum dots [G. Yusa, H. Sakaki, Appl. Phys …
Excited State Dynamics in In0.5Al0.04Ga0.46As/Al0.08Ga0.92As Self‐Assembled Quantum Dots
We use time‐resolved photoluminescence spectroscopy to probe the relaxation of excited
states in In0. 5Al0. 04Ga0. 46As/Al0. 08Ga0. 92As self‐assembled quantum dots. The …
states in In0. 5Al0. 04Ga0. 46As/Al0. 08Ga0. 92As self‐assembled quantum dots. The …
[PDF][PDF] Захват носителей заряда в InAs/AlAs-квантовые точки при гелиевой температуре
ДС Абрамкин, КС Журавлёв… - Физика и техника …, 2011 - journals.ioffe.ru
На основе простых моделей проведен анализ влияния величины вероятности захвата
носителей заряда в квантовые точки через смачивающий слой на стационарную и …
носителей заряда в квантовые точки через смачивающий слой на стационарную и …
[HTML][HTML] Electrons et phonons dans les nanostructures de semiconducteurs
R Ferreira - 2006 - hal.univ-smb.fr
Ce mémoire de «Habilitation à Diriger des Recherches» est divisé en deux parties. La partie
I est composée de trois chapitres. Les deux premiers traitent des interactions entre porteurs …
I est composée de trois chapitres. Les deux premiers traitent des interactions entre porteurs …