Revolutionizing wireless communication: A review perspective on design and optimization of RF MEMS switches
JJ Percy, S Kanthamani - Microelectronics Journal, 2023 - Elsevier
Abstract Micro Electro Mechanical System (MEMS) technology revolutionized electronics by
enabling miniaturization and integration of components like sensors, actuators, & switches …
enabling miniaturization and integration of components like sensors, actuators, & switches …
A qualitative review on tunnel field effect transistor-operation, advances, and applications
Abstract Tunnel Field Effect Transistor (TFET) has become one of the promising devices to
be part of Integrated circuits as the technology advances to the nanoscale. A TFET has many …
be part of Integrated circuits as the technology advances to the nanoscale. A TFET has many …
Device design, simulation and qualitative analysis of gaasp/6h-sic/gan metal semiconductor field effect transistor
B Balaji, KS Rao, M Aditya, KG Sravani - Silicon, 2022 - Springer
In this paper we proposed a new structure of GaAsP/6H-SiC/GaN Power semiconductor field
effect transistor with undoped region under gate. The device is made of semiconductor …
effect transistor with undoped region under gate. The device is made of semiconductor …
Vibration analysis of the radio frequency microelectromechanical system microbeam reinforced with copper nanoparticles
PE Kaleybar, Y Zehforoosh, M Zavvari… - Journal of the Brazilian …, 2024 - Springer
The efficiency of radio frequency microelectromechanical system microswitches made up of
electrodes reinforced with copper nanoparticles has been examined numerically. To …
electrodes reinforced with copper nanoparticles has been examined numerically. To …
Drain Current Characteristics of 6 H-SiC MESFET with Un-Doped and Recessed Area under the Gate: A Simulation Study
In this paper, we have investigated the impact of the un-doped and recessed gate structure
on the performance of the 6 H-SiC Metal Semiconductor Field Effect Transistor. The …
on the performance of the 6 H-SiC Metal Semiconductor Field Effect Transistor. The …
High Frequency Capacitive RF MEMS Switch Using Dielectric Silicon Nitride for Wireless Telecommunication and 5G Applications
A capacitive type of RF micro-switch with silicon nitride (Si 3 N 4) as dielectric layer and a
unique shaped spring has been presented in this paper for high frequency applications upto …
unique shaped spring has been presented in this paper for high frequency applications upto …
Ultra-Wideband 3p3t Rf Mems Switch for Fast Response Applications from Dc to 380 Ghz
J Yu, MY Zhang, J Li, Y Si, Q Wu, M Li - Available at SSRN 4627599 - papers.ssrn.com
This paper introduces a broadband 3-pole 3-throw (3P3T) RF MEMS switch with a frequency
range from DC to 380 GHz. The switch achieves precise signal control and efficient …
range from DC to 380 GHz. The switch achieves precise signal control and efficient …
[PDF][PDF] Design, Evaluation and Analysis of a Novel H-Shaped Capacitive RF MEMS Switch
S Khan, KS Rao, K Guha - 2021 - scholar.archive.org
In this paper, absolute evaluation of Radio Frequency Micro Electromechanical System (RF
MEMS) to improve parameters like high actuation voltage and low switching time, by …
MEMS) to improve parameters like high actuation voltage and low switching time, by …