On the generation of new orientations during recrystallization: recent results on the recrystallization of tensile-deformed fcc single crystals
ON THE GENERATION OF NEW ORIENTATIONS DURING RECRYSTALLIZATION: Page 1
Progress in Materials Science Vol. 32, pp. 1-95, 1988 0079-6425/88 $0.00 + .50 Printed in …
Progress in Materials Science Vol. 32, pp. 1-95, 1988 0079-6425/88 $0.00 + .50 Printed in …
[图书][B] Physical properties of III-V semiconductor compounds
S Adachi - 1992 - books.google.com
The objective of this book is two-fold: to examine key properties of III-V compounds and to
present diverse material parameters and constants of these semiconductors for a variety of …
present diverse material parameters and constants of these semiconductors for a variety of …
The theory and practice of dislocation reduction in GaAs and InP
AS Jordan, AR Von Neida, R Caruso - Journal of Crystal Growth, 1984 - Elsevier
Recently, we have shown by thermoelastic analysis that the primary cause for dislocation
generation in the LEC growth of GaAs and InP is crystallographic glide induced by …
generation in the LEC growth of GaAs and InP is crystallographic glide induced by …
Growth-and processing-induced defects in semiconductors
S Mahajan - Progress in Materials Science, 1989 - Elsevier
The semiconductors are used in two basic forms in the device technology:(i) wafers, and (ii)
epitaxial layers. Wafers are, in turn, fabricated from as-grown bulk crystals. These crystals …
epitaxial layers. Wafers are, in turn, fabricated from as-grown bulk crystals. These crystals …
Growth kinetics of silicon thermal nitridation
CY Wu, CW King, MK Lee… - Journal of the …, 1982 - iopscience.iop.org
An analytic model for the growth kinetics of silicon thermal nitridation has been developed,
in which the nitrogen radicals diffused across the as-grown thermal silicon nitride layer have …
in which the nitrogen radicals diffused across the as-grown thermal silicon nitride layer have …
Epitaxial GaAs on Si: Progress and potential applications
DW Shaw - MRS Online Proceedings Library (OPL), 1987 - cambridge.org
Recent successes, such as the demonstration of a 1K SRAM, have established epitaxial
GaAs on Si substrates as a promising technology rather than a device designer's dream. For …
GaAs on Si substrates as a promising technology rather than a device designer's dream. For …
Long-range atomic order in epitaxial layers [(x,y)=(0.47,1), (0.37,0.82), (0.34,0.71), and (0.27,0.64)]
MA Shahid, S Mahajan - Physical Review B, 1988 - APS
Transmission-electron microscopy and selected-area diffraction have been used to study Ga
x In 1− x As y P 1− y [(x, y)=(0.47, 1),(0.37, 0.82),(0.34, 0.71), and (0.27, 0.64)] alloy …
x In 1− x As y P 1− y [(x, y)=(0.47, 1),(0.37, 0.82),(0.34, 0.71), and (0.27, 0.64)] alloy …
Precision lattice parameter measurements on doped indium phosphide single crystals
K Sugii, H Koizumi, E Kubota - Journal of Electronic Materials, 1983 - Springer
Precision lattice parameter measurements have been made for various dopants as a
function of doping concentration in order to provide a basis for understanding the reduction …
function of doping concentration in order to provide a basis for understanding the reduction …
An analysis of dislocation reduction by impurity hardening in the liquid‐encapsulated Czochralski growth of< 111> InP
AS Jordan, GT Brown, B Cockayne, D Brasen… - Journal of applied …, 1985 - pubs.aip.org
Excessive impurity additions have been widely used to suppress dislocation generation in
the liquid‐encapsulated Czochralski (LEC) growth of InP. We have analyzed this approach …
the liquid‐encapsulated Czochralski (LEC) growth of InP. We have analyzed this approach …
[PDF][PDF] Microhardness studies of doped and undoped InP crystals
The study of the microhardness on undoped and doped semiconductors and the way by
which this parameter is connected with the dislocation density is of great interest [1-3]. In the …
which this parameter is connected with the dislocation density is of great interest [1-3]. In the …