Organic-based inverters: basic concepts, materials, novel architectures and applications

T Leydecker, ZM Wang, F Torricelli… - Chemical Society Reviews, 2020 - pubs.rsc.org
While organic materials have demonstrated industry-leading performances in a wide array
of electronic applications (including OLEDs and OPVs), their use for integration into …

[HTML][HTML] Evolution of solution-based organic thin-film transistor for healthcare monitoring–from device to circuit integration: A review

NS Yusof, MFP Mohamed, NA Ghazali… - Alexandria Engineering …, 2022 - Elsevier
Demand for organic electronics has growth tremendously for the past decade, owing to their
high flexibility and low processing cost attributes. As part of the important elements in …

High gain complementary inverters based on comparably-sized IGZO and DNTT source-gated transistors

E Bestelink, P Sihapitak, U Zschieschang… - Journal of Materials …, 2023 - pubs.rsc.org
We report the first implementation of a complementary circuit using thin-film source-gated
transistors (SGTs). The n-channel and p-channel SGTs were fabricated using the inorganic …

New Chemical Dopant and Counterion Mechanism for Organic Electrochemical Transistors and Organic Mixed Ionic–Electronic Conductors

VN Le, JH Bombile, GS Rupasinghe… - Advanced …, 2023 - Wiley Online Library
Organic mixed ionic–electronic conductors (OMIECs) have varied performance
requirements across a diverse application space. Chemically doping the OMIEC can be a …

p‐Doping of Copper (I) Thiocyanate (CuSCN) Hole‐Transport Layers for High‐Performance Transistors and Organic Solar Cells

N Wijeyasinghe, F Eisner, L Tsetseris… - Advanced Functional …, 2018 - Wiley Online Library
The ability to tune the electronic properties of soluble wide bandgap semiconductors is
crucial for their successful implementation as carrier‐selective interlayers in large area …

Three-dimensional integrated metal-oxide transistors

S Yuvaraja, H Faber, M Kumar, N Xiao… - Nature …, 2024 - nature.com
The monolithic three-dimensional vertical integration of thin-film transistor (TFT)
technologies could be used to create high-density, energy-efficient and low-cost integrated …

Hall effect in polycrystalline organic semiconductors: The effect of grain boundaries

HH Choi, AF Paterson, MA Fusella… - Advanced Functional …, 2020 - Wiley Online Library
Highly crystalline thin films in organic semiconductors are important for applications in high‐
performance organic optoelectronics. Here, the effect of grain boundaries on the Hall effect …

Highly optimized complementary inverters based on p-SnO and n-InGaZnO with high uniformity

J Yang, Y Wang, Y Li, Y Yuan, Z Hu… - IEEE Electron …, 2018 - ieeexplore.ieee.org
Oxide semiconductors are desirable for large-area and/or flexible electronics. Here, we
report highly optimized complementary inverters based on n-type indium–gallium–zinc …

How to print high-mobility metal oxide transistors—Recent advances in ink design, processing, and device engineering

WJ Scheideler, V Subramanian - Applied Physics Letters, 2022 - pubs.aip.org
High-throughput printing-based fabrication has emerged as a key enabler of flexible
electronics given its unique capability for low-cost integration of circuits based on printed …

Solution-processed oxide complementary inverter via laser annealing and inkjet printing

C Chen, Q Yang, G Chen, H Chen… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
Metal-oxide-semiconductors (MOS) have become an ideal candidate for the next-generation
optoelectronic device applications. However, high processing temperature and complicate …