Fermi level pinning dependent 2D semiconductor devices: challenges and prospects

X Liu, MS Choi, E Hwang, WJ Yoo, J Sun - Advanced Materials, 2022 - Wiley Online Library
Motivated by the high expectation for efficient electrostatic modulation of charge transport at
very low voltages, atomically thin 2D materials with a range of bandgaps are investigated …

Layer-structured anisotropic metal chalcogenides: recent advances in synthesis, modulation, and applications

A Giri, G Park, U Jeong - Chemical Reviews, 2023 - ACS Publications
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D
and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next …

Vapour-phase deposition of two-dimensional layered chalcogenides

T Zhang, J Wang, P Wu, AY Lu, J Kong - Nature Reviews Materials, 2023 - nature.com
Abstract Two-dimensional (2D) layered materials are attracting a lot of attention because of
unique physicochemical properties that are intriguing for both fundamental research and …

Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions

X Zhang, B Liu, L Gao, H Yu, X Liu, J Du, J Xiao… - Nature …, 2021 - nature.com
The applications of any two-dimensional (2D) semiconductor devices cannot bypass the
control of metal-semiconductor interfaces, which can be severely affected by complex Fermi …

Two-dimensional metallic alloy contacts with composition-tunable work functions

X Li, H Long, J Zhong, F Ding, W Li, Z Zhang… - Nature …, 2023 - nature.com
Heterostructures made using two-dimensional semiconducting transition metal
dichalcogenides could be used to build next-generation electronic devices. However, their …

Fermi‐Level Pinning‐Free WSe2 Transistors via 2D Van der Waals Metal Contacts and Their Circuits

J Jang, HS Ra, J Ahn, TW Kim, SH Song… - Advanced …, 2022 - Wiley Online Library
Precise control over the polarity of transistors is a key necessity for the construction of
complementary metal–oxide–semiconductor circuits. However, the polarity control of 2D …

Growth of 2D materials at the wafer scale

X Xu, T Guo, H Kim, MK Hota, RS Alsaadi… - Advanced …, 2022 - Wiley Online Library
Wafer‐scale growth has become a critical bottleneck for scaling up applications of van der
Waal (vdW) layered 2D materials in high‐end electronics and optoelectronics. Most vdW 2D …

Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents

Y Zhou, L Tong, Z Chen, L Tao, Y Pang… - Nature communications, 2023 - nature.com
Abstract Two-dimensional (2D) materials have been considered promising candidates for
future low power-dissipation and reconfigurable integrated circuit applications. However, 2D …

Controlled Synthesis and Accurate Doping of Wafer‐Scale 2D Semiconducting Transition Metal Dichalcogenides

X Li, J Yang, H Sun, L Huang, H Li, J Shi - Advanced Materials, 2023 - Wiley Online Library
Abstract 2D semiconducting transition metal dichalcogenide (TMDCs) possess atomically
thin thickness, a dangling‐bond‐free surface, flexible band structure, and silicon‐compatible …

All‐van‐der‐Waals barrier‐free contacts for high‐mobility transistors

X Zhang, H Yu, W Tang, X Wei, L Gao… - Advanced …, 2022 - Wiley Online Library
Ultrathin 2D semiconductor devices are considered to have beyond‐silicon potential but are
severely troubled by the high Schottky barriers of the metal–semiconductor contacts …