Etching a refractory metal or other high surface binding energy material on a substrate can
maintain or increase the smoothness of the metal/high EO surface, in some cases produce …

US11069535B2 - Atomic layer etch of tungsten for enhanced tungsten deposition fill - Google
Patents US11069535B2 - Atomic layer etch of tungsten for enhanced tungsten deposition fill …

5,411,631 A 5/1995 Hori et¿ 1, 5,501.893 A 3/1996 Laermer et al. 6,022,806 A 2/2000 Sato
et al. 6,083,413 A 7/2000 Sawub et al. 6.177. 353 B1 1/2001 Gutsche et al. 6,448, 192 B1 …

One or more embodiments described herein generally relate to patterning semiconductor
film stacks. Unlike in conventional embodiments, the film stacks herein are patterned without …

Methods for evaluating synergy of modification and removal operations for a wide variety of
materials to determine process conditions for self-limiting etching by atomic layer etching are …

One or more embodiments described herein generally relate to patterning semiconductor
film stacks. Unlike in conventional embodiments, the film stacks herein are patterned without …

A process flow for forming magnetic tunnel junction (MTJ) nanopillars with minimal sidewall
residue and minimal sidewall damage is disclosed wherein a pattern is first formed in a hard …

There is provided a method for manufacturing a magnetic tunnel junction element which
prevents properties degradation due to hydrogen ions, and to which RIE processing that is …

A method of magnetic tunnel junction patterning for magnetoresistive random access
memory devices using low atomic weight ion sputtering. The method includes: providing a …

In a plasma etching method of plasma-etching a sample which has a first magnetic film, a
second magnetic film disposed above the first magnetic film, a metal oxide film disposed …