A study of p-type dopants for InP grown by adduct MOVPE

AW Nelson, LD Westbrook - Journal of Crystal Growth, 1984 - Elsevier
Abstract Zn, Cd and Mg have been studied as suitable dopants for the preparation of p-type
InP by adduct MOVPE. Electrical characterisation and SIMS measurements have been used …

Synthesis of In1–xGaxP Quantum Dots in Lewis Basic Molten Salts: The Effects of Surface Chemistry, Reaction Conditions, and Molten Salt Composition

MH Hudson, A Gupta, V Srivastava… - The Journal of …, 2022 - ACS Publications
Inorganic molten salts are emerging as versatile solvents for high-temperature processing of
colloidal nanocrystals. Molten alkali bromide eutectics can serve as a convenient solvent for …

Seeding layer assisted selective-area growth of As-rich InAsP nanowires on InP substrates

D Ren, AC Farrell, BS Williams, DL Huffaker - Nanoscale, 2017 - pubs.rsc.org
We present the first demonstration of arsenic-rich InAs1− xPx (0≤ x≤ 0.33) nanowire arrays
grown on InP (111) B substrates by catalyst-free selective-area metal–organic chemical …

Transition metal diffusion in InP: Photoluminescence investigation

MS Skolnick, EJ Foulkes, B Tuck - Journal of applied physics, 1984 - pubs.aip.org
The 3 d transition metals (TM's) from Cr to Cu introduced into InP by diffusion are studied
using low temperature photoluminescence (PL). Luminescence bands from Mn, Co, and Cu …

Urbach-edge-assisted electro-absorption for enhanced free-space optical modulation

IR Hristovski, NI Lesack, LA Herman, JF Holzman - Optics Letters, 2020 - opg.optica.org
In this work, we introduce an electro-absorption (EA)-based retro-modulator for effective
realization of free-space optical communications via passive downlinks. Demands for deep …

Fabrication of III-V integrated photonic devices

K Awan - 2018 - ruor.uottawa.ca
This doctoral dissertation focuses on fabrication processes for integrated photonic devices
based on III-V semiconductors. This work covers a range of III-V materials and a variety of …

A study of zinc doping in metallo‐organic chemical vapor deposition of InP

AW Nelson, LD Westbrook - Journal of applied physics, 1984 - pubs.aip.org
Over the last ten years the quality of both bulk and epitaxial InP has improved substantially
and the material is now receiving a great deal of attention as its properties are utilized in a …

Time-resolved Raman studies of the photoexcited electron-hole plasma in InP

KT Tsen, G Halama, OF Sankey, SCY Tsen, H Morkoc - Physical Review B, 1989 - APS
Both lateral and perpendicular transport properties of the photoexcited electron-hole plasma
in n-type InP have been studied by the time-resolved Raman scattering technique with≃ 30 …

Structural transformations of InP (001) surfaces

Q Guo, ME Pemble, EM Williams - Surface science, 2000 - Elsevier
Structural transformations of InP (001) surfaces over a wide range of temperature and
surface stoichiometry have been investigated.(1× 1)-and (2× 1)-reconstructed surfaces are …

[PDF][PDF] Fabrication and characterization of thermophotonic devices

A Olsson - 2011 - aaltodoc.aalto.fi
In this thesis, the fabrication properties and characterization of broad area light emitting LED
structures for thermo photonic devices are studied. The operation of a thermo photonic …