High-performance polymer materials with low dielectric constant and low dielectric loss have
been widely used in high-speed communication network. This review briefly introduces …

The fabrication of next-generation semiconductor devices has created a need for low-
temperature (≤ 400 C) deposition of highly-conformal (> 95%) SiO 2, SiN x, and SiC films …

Decrease in processing speed due to increased resistance and capacitance delay is a
major obstacle for the down-scaling of electronics,–. Minimizing the dimensions of …

Processes are provided herein for deposition of organic films. Organic films can be
deposited, including selective deposition on one surface of a substrate relative to a second …

Metallic layers can be selectively deposited on one surface of a substrate relative to a
second surface of the substrate. In some embodiments, the metallic layers are selectively …

Methods and apparatus for vapor deposition of an organic film are configured to vaporize an
organic reactant at a first temperature, transport the vapor to a reaction chamber housing a …

Methods are provided for selectively depositing a material on a first metal or metallic surface
of a substrate relative to a second, dielectric surface of the substrate, or for selectively …

2006/0141155 A1 2006/0176559 Al 2006/0199399 A1 2006/0226409 A1 2006/0292845 Al
2007/0014919 Al 2007/0026654 Al 2007/0063317 Al 2007/0099422 Al 2007/0241390 A1 …

Methods are provided for dual selective deposition of a first material on a first surface of a
substrate and a second material on a second, different surface of the same substrate. The …

Methods are provided for selectively depositing a surface of a substrate relative to a second,
different surface. An exem plary deposition method can include selectively depositing a …