This paper presents a comprehensive review of the method of liquid phase epitaxy (LPE) of
semiconductors. In Sect. 1 the physical principles including diffusion-limited growth and …

Distinct improvements in avalanche-gain and dark-current characteristics have been made
in InGaAsP heterostructure APD's. A planar-type pn junction is formed in an InP window …

The contact properties of various metal combinations, deposited by vacuum evaporation on
InP, were studied. Among these metal combinations, Au/Ge+ Ni and Au/Zn proved to be …

The liquid-phase epitaxy and device fabrication of pn and pin Ga 1-x Al x Sb avalanche
photodiodes is described. Breakdown voltages up to 95 V and dark currents of 10-4 A/cm 2 …

This review discusses the requirements and constraints on components for long-wavelength
monomode systems. In particular it critically reviews the current status of fibre, splicing …

Advances in low-loss low-dispersion silica fibers for optical communications have stimulated
concurrent development of several laser and LED sources for wavelengths longer than …

The theory of operation of the heterojunction phototransistor (HPT) is reviewed and the
limitations on gain and speed-of-response are examined in the context of fiber optic systems …

The performance of high-speed, high-quantum-efficiency GaAlAsSb avalanche
photodetectors suitable for a 1.0-1.4\mu m high-performance fiber-optical communication …

InGaAsP-InP heterojunction phototransistors have been fabricated by liquid phase epitaxy.
The phototransistors have optical gains greater than 100 for 1.26-, um radiation. High …

A planar InP-based InGaAs heterostructure avalanche photodiode (APD) with a preferential
lateral extended guard ring is proposed. Optimum design and device fabrication are …