Photonic van der Waals integration from 2D materials to 3D nanomembranes
The integration of functional nanomaterials and heterostructures with photonic architectures
has laid the foundation for important photonic and optoelectronic applications. The advent of …
has laid the foundation for important photonic and optoelectronic applications. The advent of …
[HTML][HTML] Group IV direct band gap photonics: methods, challenges, and opportunities
The concept of direct band gap group IV materials may offer a paradigm change for Si-
photonics concerning the monolithic implementation of light emitters: the idea is to integrate …
photonics concerning the monolithic implementation of light emitters: the idea is to integrate …
Achieving direct band gap in germanium through integration of Sn alloying and external strain
GeSn is predicted to exhibit an indirect to direct band gap transition at alloy Sn composition
of 6.5% and biaxial strain effects are investigated in order to further optimize GeSn band …
of 6.5% and biaxial strain effects are investigated in order to further optimize GeSn band …
Direct bandgap group IV epitaxy on Si for laser applications
N Von Den Driesch, D Stange, S Wirths… - Chemistry of …, 2015 - ACS Publications
The recent observation of a fundamental direct bandgap for GeSn group IV alloys and the
demonstration of low temperature lasing provide new perspectives on the fabrication of Si …
demonstration of low temperature lasing provide new perspectives on the fabrication of Si …
Direct bandgap germanium-on-silicon inferred from 5.7%〈 100〉 uniaxial tensile strain
We report uniaxial tensile strains up to 5.7% along〈 100〉 in suspended germanium (Ge)
wires on a silicon substrate, measured using Raman spectroscopy. This strain is sufficient to …
wires on a silicon substrate, measured using Raman spectroscopy. This strain is sufficient to …
Strain-induced pseudoheterostructure nanowires confining carriers at room temperature with nanoscale-tunable band profiles
Semiconductor heterostructures play a vital role in photonics and electronics. They are
typically realized by growing layers of different materials, complicating fabrication and …
typically realized by growing layers of different materials, complicating fabrication and …
Single-crystalline germanium nanomembrane photodetectors on foreign nanocavities
Miniaturization of optoelectronic devices offers tremendous performance gain. As the
volume of photoactive material decreases, optoelectronic performance improves, including …
volume of photoactive material decreases, optoelectronic performance improves, including …
Strain engineering 2D MoS2 with thin film stress capping layers
We demonstrate a method to induce tensile and compressive strain into two-dimensional
transition metal dichalcogenide (TMDC) MoS 2 via the deposition of stressed thin films to …
transition metal dichalcogenide (TMDC) MoS 2 via the deposition of stressed thin films to …
Direct bandgap light emission from strained germanium nanowires coupled with high-Q nanophotonic cavities
A silicon-compatible light source is the final missing piece for completing high-speed, low-
power on-chip optical interconnects. In this paper, we present a germanium nanowire light …
power on-chip optical interconnects. In this paper, we present a germanium nanowire light …
Roadmap to an efficient germanium-on-silicon laser: strain vs. n-type doping
B Dutt, DS Sukhdeo, D Nam, BM Vulovic… - IEEE Photonics …, 2012 - ieeexplore.ieee.org
We provide a theoretical analysis of the relative merits of tensile strain and n-type doping as
approaches to realizing an efficient low-power germanium laser. Ultimately, tensile strain …
approaches to realizing an efficient low-power germanium laser. Ultimately, tensile strain …