Resonant tunneling diodes high-speed terahertz wireless communications-a review

D Cimbri, J Wang, A Al-Khalidi… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Resonant tunneling diode (RTD) technology is emerging as one of the promising
semiconductor-based solid-state technologies for terahertz (THz) wireless communications …

Near-field focusing by non-diffracting Bessel beams

M Ettorre, SC Pavone, M Casaletti, M Albani… - Aperture Antennas for …, 2018 - Springer
This chapter illustrates the capabilities of non-diffractive Bessel beams for near-field
focusing. After a brief introduction of the non-diffractive phenomenon and its origin, the …

H-Band Substrate-Integrated Discrete-Lens Antenna for High Data Rate Communication Systems

K Medrar, L Marnat, L Dussopt… - … on Antennas and …, 2020 - ieeexplore.ieee.org
A substrate-integrated discrete-lens antenna manufactured in standard printed-circuit-board
(PCB) technology is demonstrated in H-band (225-325 GHz). The arrays composed of …

15-Gb/s 50-cm wireless link using a high-power compact III–V 84-GHz transmitter

J Wang, A Al-Khalidi, L Wang, R Morariu… - IEEE transactions on …, 2018 - ieeexplore.ieee.org
This paper reports on a 15-Gb/s wireless link that employs a high-power resonant tunneling
diode (RTD) oscillator as a transmitter (Tx). The fundamental carrier frequency is 84 GHz …

Rigorous evaluation of losses in uniform leaky-wave antennas

W Fuscaldo - IEEE Transactions on Antennas and Propagation, 2019 - ieeexplore.ieee.org
General formulas are proposed for thoroughly evaluating the radiation efficiency of traveling-
wave antennas operating in any radiating regime. Indeed, existing theoretical models only …

Accurate Quantum Transport Modeling of High-Speed In0.53Ga0.47As/AlAs Double-Barrier Resonant Tunneling Diodes

D Cimbri, B Yavas-Aydin, F Hartmann… - … on Electron Devices, 2022 - ieeexplore.ieee.org
In this article, we demonstrate a reliable physics-based simulation approach to accurately
model high-speed In 0.53 Ga 0.47 As/AlAs double-barrier resonant tunneling diodes …

Accurate Design Method for Millimeter Wave Distributed Amplifier Based on Four-Port Chain (ABCD) Matrix Model

M El-Chaar, L Vincent, JD Arnould… - … on Circuits and …, 2022 - ieeexplore.ieee.org
This article presents a matrix-based model suitable for millimeter-wave (mm-wave)
distributed amplifier (DA) design, based on four-port chain (ABCD) formalism. Using this …

Curved Nanoflakes of Alkane-Grafted Ti3C2Tx MXene Thin Flims for Enhanced Terahertz Electromagnetic Interference Shielding

Z Zhao, I Pinkas, C Zhang, Y Xiao, X Sui… - ACS Applied Nano …, 2024 - ACS Publications
The sixth-generation wireless communication (6G) extends the electromagnetic pollution up
to the terahertz band. The two-dimensional titanium carbide of intercalated structure Ti3C2T …

A compact 77% fractional bandwidth CMOS band-pass distributed amplifier with mirror-symmetric Norton transforms

V Bhagavatula, M Taghivand… - IEEE Journal of Solid …, 2015 - ieeexplore.ieee.org
This paper presents the design of a high fractional-bandwidth millimeter-wave band-pass
distributed amplifier (BPDA) implemented in a 40 nm (LP) CMOS process. A high-order load …

Gain Boosting in Distributed Amplifiers for Close-to-fmax Operation in Silicon

H Rashtian, O Momeni - IEEE Transactions on Microwave …, 2019 - ieeexplore.ieee.org
In this paper, the challenges of designing distributed amplifiers at frequencies close to f max
of transistors are tackled. By using bandpass transmission lines, the maximum operation …