Direct contact, ohmic MEMS switches for RF applications have several advantages over
other conventional switching devices. Advantages include lower insertion loss, higher …

The RF community has long been searching for the ideal switch since the birth of
electronics, and it is defined as a device having virtually no insertion loss (Ron= 0 Ω) over a …

Covering graphene (Gr) coatings on high-entropy alloy (HEA) films is a promising approach
to avoid its contact damage. However, current understanding regarding the underlying …

This paper presents the characterization, optimization, and fabrication of phase change
material (PCM) germanium telluride (GeTe) based RF switches investigating the materials' …

Molecular dynamics (MD) simulations are performed to study the repeated nanoindentation
on aluminum (Al) substrate with different boron nitride nanosheet (BNNS) coating thickness …

This article presents an approach to monolithically implement radio-frequency (RF) phase
change material (PCM) germanium telluride (GeTe) T-type switch as a switching unit cell for …

This paper reports on a submillimeter-wave 500-750 GHz micorelectromechanical systems
(MEMS) waveguide switch based on a MEMS-reconfigurable surface to block/unblock the …

This study reports the design and analysis of novel step structure RF micro‐
electromechanical system (MEMS) switch for low pull‐in voltage, low insertion loss and high …

The miniaturization and low power consumption characteristics of RF MEMS (Radio
Frequency Microelectromechanical System) switches provide new possibilities for the …

In this paper, a novel high isolation and high-capacitance-ratio radio-frequency micro-
electromechanical systems (RF MEMS) switch working at Ka-band is designed, fabricated …