Pattern transfer in microelectronics fabrication using plasma-assisted etching processes is
being challenged by the three-dimensional (3d) structures of devices such as fin field effect …

Photo-assisted etching of p-type Si was previously found to occur in a chlorine-containing,
Faraday-shielded, inductively coupled plasma (ICP), and this was attributed to the vacuum …

We investigated the formation mechanism of sidewall striations in etched holes with high
aspect ratios, with focus on the roles of energetic ions and fluorocarbon radicals. Striations …

Plasma etching is a critical process for the realization of high performance in the next
generation of CMOS devices. To predict and control fluctuations in the etching properties …

The influence of the amount of hydrogen (H) in hydrogenated silicon nitride films (Si x N y: H
z) on the etching properties and etching mechanism are unclear for hydrofluorocarbon …

Atomic-or nanometer-scale roughness on feature surfaces has become an important issue
to be resolved in the fabrication of nanoscale devices in industry. Moreover, in some cases …

Feature profiles of Si etched in HBr-containing plasmas have been analyzed through a
comparison between experiments and simulations. The emphasis was placed on a …

This work describes the modeling of the surface reactions involved in atomic layer etching
(ALE) of SiO 2 and Si 3 N 4 with a deposition step using C 4 F 8/O 2/Ar plasma and an Ar …

The authors modeled SiN film etching with hydrofluorocarbon (CH x F y/Ar/O 2) plasma
considering physical (ion bombardment) and chemical reactions in detail, including the …

Α multiscale modeling framework, linking the operating parameters of a low pressure
plasma reactor with the surface roughness being formed on the etched substrate, is …