The progress made toward the definition of a modular compact modeling technology for
graphene field‐effect transistors (GFETs) that enables the electrical analysis of arbitrary …

Despite the rapid increase in the number of newly developed processes, area-selective
atomic layer deposition (ALD) of nitrides is largely unexplored. ALD of nitrides at low …

While graphene has held the center stage in nanocarbon material research since its
isolation in 2004, less attention has been paid to nanometer-thick carbon films in which at …

Deposition of high-k dielectric thin films is essential for manufacturing modern electronic
devices. Atomic layer deposition (ALD) is an attractive technology for depositing high-k …

Metal–organic frameworks are a class of porous materials that show promising properties in
the field of microelectronics. To reach industrial use of these materials, gas phase …

We have examined the atomic layer deposition (ALD) of Al2O3 using TMA as the precursor
and t-BuOH and H2O as the co-reactants, focusing on the effects of the latter on both the …

As feature sizes continue to shrink well beyond the 7 nm node, understanding the delicate
balance present in the chemical mechanical planarization (CMP) process is of utmost …

Dielectric nanocomposite materials are now involved in a large panel of electrical
engineering applications ranging from micro-/nano-electronics to power devices. The …

Carborane (C2B10H12) molecules are unique precursors for self-assembled monolayer
(SAM) applications. These 3D, icosahedral (12-vertex) molecules allow for the formation of …

Embedded three-dimensional (3-D) metal-insulator-metal (MIM) decoupling capacitors with
high-κ dielectric films of high capacitance and long-life time are increasingly needed on …