We show that a change to the quality (Q) factor of a laser diode cavity affects the electrical
properties of the device. The mechanism is demonstrated experimentally and numerically …

Light-emitting diodes based on quantum dots (QD-LEDs) have attracted much attention not
only due to their usage in lighting and display applications but also as the light sources in …

In this paper, we have studied the strain, band-edge, and energy levels of cubic InGaAs
quantum dots (QDs) surrounded by GaAs. It is shown that overall strain value is larger in …

Band edge and energy levels of truncated pyramidal In x Ga1–x As/GaAs (001) quantum
dots are studied by single-band effective mass approach, and the dependence to …

The time dependencies of the carrier relaxation in modulation-doped InGaAs-GaAs low-
dimensional structures with quantum wires have been studied as functions of temperature …

The purpose of this research is to study numerically laser dynamics of InAs/GaAs Quantum
Dot Lasers (QDLs) with different QD sizes. To date, most of investigations have focused just …

We propose a model for operation of mode-locked (ML) quantum-well semiconductor laser
consisting of a reverse biased saturable absorber and a forward biased amplifying section …

In this paper, the strain, band-edge, and energy levels of pyramidal In _x Ga _ 1-x As/GaAs
In x Ga 1-x As/GaAs quantum dots are investigated by 1-band effective mass approach. It is …

In this paper, the strain, band-edge, and energy levels of pyramidal In_x Ga_ (1-x) As/GaAs
quantum dot lasers (QDLs) are investigated by 1-band effective mass approach. It is shown …

Quantum dot lasers have been the focus of researchers due to their interesting optical
properties owing to quantum confinement of carriers. In epitaxial quantum dots formed on a …