Fabrication of penetrating pores in epitaxial Ge-on-Si through preferential etching along threading dislocations
Abstract Epitaxial Ge-on-Si possesses a high density of threading dislocations (TDs) due to
the lattice mismatch and difference in thermal expansion coefficient. By employing the lattice …
the lattice mismatch and difference in thermal expansion coefficient. By employing the lattice …
[HTML][HTML] Sustainable Production of Ultrathin Ge Freestanding Membranes
Germanium (Ge) is a critical material for applications in space solar cells, integrated
photonics, infrared imaging, sensing, and photodetectors. However, the corresponding cost …
photonics, infrared imaging, sensing, and photodetectors. However, the corresponding cost …
[HTML][HTML] Comprehensive investigation of thermal induced reorganization of porous-germanium structures
Porous germanium (PGe) substrates have recently attracted significant attention for the
development of lightweight and flexible solar cells and optoelectronic devices. A reliable …
development of lightweight and flexible solar cells and optoelectronic devices. A reliable …
Wafer-Scale Porous Germanium Bilayer Structure Formation by Fast Bipolar Electrochemical Etching
Abstract Recently, porous Germanium (PGe) structures have gained significant attention as
a promising engineering material for a broad range of applications due to the versatility of its …
a promising engineering material for a broad range of applications due to the versatility of its …