Femtosecond all-optical devices for ultrafast communication and signal processing

O Wada - New Journal of Physics, 2004 - iopscience.iop.org
Future bandwidth demand in optical communication and signal processing systems will
soon exceed 100 Gb s− 1 as is commonly forecasted from a throughput experience curve for …

A review of high-power semiconductor optical amplifiers in the 1550 nm band

H Tang, C Yang, L Qin, L Liang, Y Lei, P Jia, Y Chen… - Sensors, 2023 - mdpi.com
The 1550 nm band semiconductor optical amplifier (SOA) has great potential for
applications such as optical communication. Its wide-gain bandwidth is helpful in expanding …

Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots

A Lundskog, CW Hsu, K Fredrik Karlsson… - Light: Science & …, 2014 - nature.com
Semiconductor quantum dots (QDs) have been demonstrated viable for efficient light
emission applications, in particular for the emission of single photons on demand. However …

Design of ultrafast all-optical 4-bit parity generator and checker using quantum-dot semiconductor optical amplifier-based Mach-Zehnder interferometer

E Dimitriadou, KE Zoiros, T Chattopadhyay… - Journal of Computational …, 2013 - Springer
The feasibility of implementing all-optically an ultrafast 4-bit parity generator and checker
using the quantum-dot semiconductor optical amplifier (QD-SOA)-based Mach-Zehnder …

Proposal for ultrafast all-optical XNOR gate using single quantum-dot semiconductor optical amplifier-based Mach–Zehnder interferometer

E Dimitriadou, KE Zoiros - Optics & Laser Technology, 2013 - Elsevier
The feasibility of realizing an all-optical XNOR gate for 160Gb/s return-to-zero data pulses
by using for the first time a single quantum-dot semiconductor optical amplifier (QD-SOA) …

Ultra-broadband depolarization based on directly-coupled quantum wire-to-well modulation and their aliasing effect for polarization-insensitive light-emitting diodes

Y Wang, H Tai, R Duan, M Zheng, Y Shi, J Zhang… - Nanoscale, 2023 - pubs.rsc.org
Nowadays, strained quantum structures have been widely used in various light-emitting
devices with a variety of compounds for progressive applications. However, the lattice …

Extremely stable temperature characteristics of 1550-nm band, p-doped, highly stacked quantum-dot laser diodes

A Matsumoto, K Akahane, T Umezawa… - Japanese Journal of …, 2017 - iopscience.iop.org
Abstract We fabricated 1.55-µm band, broad-area, p-doped, 30-layer stacked quantum-dot
(QD) laser diodes (LDs) grown on an InP (311) B substrate via a delta-doping method …

Coherent wavelength conversion in a quantum dot SOA

G Contestabile, Y Yoshida, A Maruta… - IEEE Photonics …, 2013 - ieeexplore.ieee.org
We experimentally demonstrate wavelength conversion of coherent signals in an
InAs/InGaAsP/InP columnar quantum dot semiconductor optical amplifier by using low …

Tunable dual-wavelength heterogeneous quantum dot laser diode with a silicon external cavity

T Kita, A Matsumoto, N Yamamoto… - Journal of Lightwave …, 2018 - opg.optica.org
We propose a tunable dual-wavelength heterogeneous quantum dot laser diode. The
tunable dual-wavelength laser consists of a quantum dot semiconductor optical amplifier as …

Four wave mixing in quantum dot semiconductor optical amplifiers

G Contestabile, A Maruta… - IEEE Journal of Quantum …, 2014 - ieeexplore.ieee.org
We report an extensive experimental characterization of four wave mixing (FWM) in
InAs/InGaAsP/InP columnar quantum dot semiconductor optical amplifiers (QD-SOAs). This …