Radiation damage in GaN/AlGaN and SiC electronic and photonic devices
The wide bandgap semiconductors SiC and GaN are commercialized for power electronics
and for visible to UV light-emitting diodes in the case of the GaN/InGaN/AlGaN materials …
and for visible to UV light-emitting diodes in the case of the GaN/InGaN/AlGaN materials …
Monte Carlo simulations of ion channeling in the presence of dislocation loops: New development in the McChasy code
P Jóźwik, A Caçador, K Lorenz, R Ratajczak… - Nuclear Instruments and …, 2023 - Elsevier
There has been a long interest in the analysis of radiation damage caused by ion beams
due to their presence in space or the nuclear industry and their application in materials …
due to their presence in space or the nuclear industry and their application in materials …
Impact of swift heavy ion irradiation on as-grown gallium nitride epilayers by MOCVD technique
P Atheek, P Puviarasu, SM Basha - Radiation Physics and Chemistry, 2024 - Elsevier
The as-grown GaN by Metalorganic Chemical Vapor Deposition was utilized to study the
irradiation effects on GaN epilayers. The stopping range of ions in the matter is studied to …
irradiation effects on GaN epilayers. The stopping range of ions in the matter is studied to …