Recent research on photodetectors has been mainly focused on nanostructured materials
that form the building blocks of device fabrication. The selection of a suitable material with …

Silicon photonics is considered as one of the promising technologies for high-speed optical
fiber communications. Among various silicon photonic devices, germanium on silicon …

The conventional direct parameter extraction method generally suffers from cumbersome
due to redundant experiments. An efficient and systematical parameter extracting solution is …

Accurate modeling and efficient parameter extraction of the equivalent circuit model of high-
speed vertical-cavity surface emitting lasers (VCSELs) for high-frequency operation based …

The resonant tunnelling diode (RTD) is a semiconductor device that can act as the highest
speed electronic amplifier and oscillator (bandwidth> 1 THz). It is made using ultrathin (< 10 …

In this paper, a circuit-level model for accurately calculating vertical-cavity surface-emitting
laser's (VCSEL) response under pulsed working condition is implemented in the advanced …

Demonstration of 25Gbit/s per channel NRZ transmission with 35 dB power budget using 25G
Ge/Si APD for next generation 100G-PON Page 1 M3H.6.pdf OFC 2017 © OSA 2017 …

We report the circuit design of first 25G burst mode TIA in the world, fabricated by 0.13 μm
SiGe: C BiCMOS (ft/fmax= 300/500 GHz), and the evaluation results when used 25G-PIN …

This paper presents the design and testing of a 15 Gbps non-return-to-zero (NRZ), 30 Gbps
4-level pulse amplitude modulation (PAM4) configurable laser diode driver (LDD) …

Silicon photonics is one of the promising technologies for high-speed optical fiber
communications. Among various silicon photonic devices, germanium on silicon avalanche …