A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …
We discuss their material and electronic properties with an emphasis on the crystal …
Ultrawide-bandgap semiconductors: An overview
Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a
renaissance exemplified by advances in material-level understanding, extensions of known …
renaissance exemplified by advances in material-level understanding, extensions of known …
[HTML][HTML] β-Gallium oxide power electronics
Gallium Oxide has undergone rapid technological maturation over the last decade, pushing
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …
Enhancement Mode β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) With High Transconductance and Cutoff Frequency
This letter reports-(Al x Ga 1-x) 2 O 3/Ga 2 O 3 (AlGaO/GaO) heterostructure FETs (HFETs)
with significant improvement of peak transconductance (gm), current and power gain cutoff …
with significant improvement of peak transconductance (gm), current and power gain cutoff …
Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al x Ga1− x) 2O3/β-Ga2O3 heterostructure channels
We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown β-
(Al x Ga 1− x) 2 O 3/β-Ga 2 O 3 modulation-doped heterostructures. Electron channel is …
(Al x Ga 1− x) 2 O 3/β-Ga 2 O 3 modulation-doped heterostructures. Electron channel is …
First-principles calculations of structural, electrical, and optical properties of ultra-wide bandgap (AlGa)O alloys
JB Varley - Journal of Materials Research, 2021 - Springer
Alloys between Ga 2 O 3 and Al 2 O 3 (AGO) present a rich material space exhibiting
numerous structural phases with unique optoelectronic properties that make them attractive …
numerous structural phases with unique optoelectronic properties that make them attractive …
Tutorial: Metalorganic chemical vapor deposition of β-Ga2O3 thin films, alloys, and heterostructures
ABSTRACT β-phase gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG)
semiconductor with a bandgap energy of∼ 4.8 eV and a predicted high critical electric field …
semiconductor with a bandgap energy of∼ 4.8 eV and a predicted high critical electric field …
[HTML][HTML] Metalorganic chemical vapor deposition of β-(AlxGa1− x) 2O3 thin films on (001) β-Ga2O3 substrates
Phase pure β-(AlxGa1− x) 2O3 thin films are grown on (001) oriented β-Ga2O3 substrates
via metalorganic chemical vapor deposition. By systematically tuning the precursor molar …
via metalorganic chemical vapor deposition. By systematically tuning the precursor molar …
Plasmon–Phonon Coupling in Electrostatically Gated β-Ga2O3 Films with Mobility Exceeding 200 cm2 V–1 s–1
Monoclinic β-Ga2O3, an ultra-wide bandgap semiconductor, has seen enormous activity in
recent years. However, the fundamental study of the plasmon–phonon coupling that dictates …
recent years. However, the fundamental study of the plasmon–phonon coupling that dictates …
(AlxGa1-x) 2O3-based materials: Growth, properties, and device applications
H Li, Z Wu, S Wu, P Tian, Z Fang - Journal of Alloys and Compounds, 2023 - Elsevier
In recent years, the (Al x Ga 1-x) 2 O 3 materials have attracted intense research interest due
to their considerable potentials in the fabrication of deep-ultraviolet optoelectronic and high …
to their considerable potentials in the fabrication of deep-ultraviolet optoelectronic and high …