Techniques for joining dissimilar materials in microelectronics
GG Fountain Jr, C Mandalapu… - US Patent 11,664,357, 2023 - Google Patents
2020-01-17 Assigned to INVENSAS BONDING TECHNOLOGIES, INC. reassignment
INVENSAS BONDING TECHNOLOGIES, INC. ASSIGNMENT OF ASSIGNORS INTEREST …
INVENSAS BONDING TECHNOLOGIES, INC. ASSIGNMENT OF ASSIGNORS INTEREST …
Method for forming a semiconductor-on-insulator (SOI) substrate
C Wu, CS Tsai, JF Lu, KL Liu, SP Chou… - US Patent …, 2022 - Google Patents
Various embodiments of the present application are directed towards a method for forming a
semiconductor-on-insulator (SOI) substrate with a thick device layer and a thick insulator …
semiconductor-on-insulator (SOI) substrate with a thick device layer and a thick insulator …
Method for producing bonded SOI wafer
T Ishizuka, M Nakano - US Patent 11,056,381, 2021 - Google Patents
A method for producing a bonded SOI wafer by bonding a bond wafer and a base wafer,
each being formed of a silicon single crystal, together with a silicon oxide film placed …
each being formed of a silicon single crystal, together with a silicon oxide film placed …
High resistivity silicon-on-insulator structure and method of manufacture thereof
JL Libbert, Q Liu, G Wang, AM Jones - US Patent 11,145,538, 2021 - Google Patents
US11145538B2 - High resistivity silicon-on-insulator structure and method of manufacture thereof
- Google Patents US11145538B2 - High resistivity silicon-on-insulator structure and method of …
- Google Patents US11145538B2 - High resistivity silicon-on-insulator structure and method of …
Method for forming a semiconductor-on-insulator (SOI) substrate
C Wu, CS Tsai, JF Lu, KL Liu, SP Chou… - US Patent …, 2020 - Google Patents
METHOD FOR FORMING A for the purpose of simplicity and clarity and does not in itself
SEMICONDUCTOR-ON-INSULATOR (SOI) dictate a relationship between the various …
SEMICONDUCTOR-ON-INSULATOR (SOI) dictate a relationship between the various …
Heterogeneous annealing method
PM Enquist, GG Fountain - US Patent 11,631,586, 2023 - Google Patents
Amethod of integrating a first substrate having a first surface with a first insulating material
and a first contact structure with a second substrate having a second surface with a second …
and a first contact structure with a second substrate having a second surface with a second …
Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability
MR Seacrist, RW Standley, JL Libbert… - US Patent …, 2024 - Google Patents
A semiconductor-on-insulator (eg, silicon-on-insulator) structure having superior radio
frequency device performance, and a method of preparing such a structure, is provided by …
frequency device performance, and a method of preparing such a structure, is provided by …
Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability
MR Seacrist, RW Standley, JL Libbert… - US Patent …, 2024 - Google Patents
A semiconductor-on-insulator (eg, silicon-on-insulator) structure having superior radio
frequency device performance, and a method of preparing such a structure, is provided by …
frequency device performance, and a method of preparing such a structure, is provided by …
Method for forming a semiconductor-on-insulator (SOI) substrate
C Wu, CS Tsai, JF Lu, KL Liu, SP Chou… - US Patent …, 2023 - Google Patents
Various embodiments of the present application are directed towards a method for forming a
semiconductor-on-insulator (SOI) substrate with a thick device layer and a thick insulator …
semiconductor-on-insulator (SOI) substrate with a thick device layer and a thick insulator …
Method for forming a useful substrate trapping structure
E Augendre, F Andrieu, C Taillandier - US Patent App. 17/454,091, 2022 - Google Patents
The invention relates to a method of forming a trapping structure of a useful substrate
designed to trap charges and limit at least one of crosstalk, radio frequency losses, and …
designed to trap charges and limit at least one of crosstalk, radio frequency losses, and …