[HTML][HTML] Highlighting the role of 3C–SiC in the performance optimization of (Al, Ga) N‒based High‒Electron mobility transistors
AlN nucleation layer is the key issue for the performance of GaN high frequency
telecommunication and power switching systems fabricated after heteroepitaxy on Silicon or …
telecommunication and power switching systems fabricated after heteroepitaxy on Silicon or …
Length and polarity dependent saturation of the electromechanical response of piezoelectric semiconducting nanowires
AJL Garcia, M Mouis, T Jalabert… - Journal of Physics D …, 2023 - iopscience.iop.org
The question of the length dependence of the electromechanical response of
semiconducting (SC) piezoelectric nanowires (NWs) was explored. We identified a new …
semiconducting (SC) piezoelectric nanowires (NWs) was explored. We identified a new …
Development of low-resistance ohmic contacts with bilayer NiO/Al-doped ZnO thin films to p-type GaN
T Slimani Tlemcani, C Mauduit, M Bah… - … Applied Materials & …, 2023 - ACS Publications
The fabrication of low-resistance and thermally stable Ohmic contacts is essential for the
realization of reliable GaN power devices. In the particular case of p-type GaN, a thin Ni/Au …
realization of reliable GaN power devices. In the particular case of p-type GaN, a thin Ni/Au …