Photoinduced current transient spectroscopy in high‐resistivity bulk materials: Instrumentation and methodology

M Tapiero, N Benjelloun, JP Zielinger… - Journal of applied …, 1988 - pubs.aip.org
A sensitive photoinduced current transient spectroscopy technique using a computer for
data acquisition and processing has been worked out. It enables one to determine …

Determination of the factors controlling the optical background absorption in nominally undoped and doped sillenites

H Marquet, M Tapiero, JC Merle, JP Zielinger… - Optical Materials, 1998 - Elsevier
We investigated the background absorption spectrum of undoped and doped crystals within
the BMO family (Bi12MO20, M= Ge, Si, Ti). Dopants were Al, Fe, Cu, Cu/V, and Cr. Many of …

Deep center characterization by photo‐induced transient spectroscopy

MJSP Brasil, P Motisuke - Journal of applied physics, 1990 - pubs.aip.org
We show that photo‐induced current transients in semi‐insulating GaAs are well fitted by a
unique sum of exponentials including the anomalous case, in which one of the exponentials …

The low‐temperature photochromic response of bismuth germanium oxide

JJ Martin, I Foldvari, CA Hunt - Journal of applied physics, 1991 - pubs.aip.org
Exposing the photorefractive bismuth germanium oxide (BGO) at low temperatures to 2.5–
3.3 eV light produces photochromic absorption bands. In both undoped and Fe‐doped …

Theory of origins of the photorefractive and photoconductive effects in Bi12SiO20

AE Attard - Journal of applied physics, 1991 - pubs.aip.org
We have observed modulation of the dark current in Bi12SiO20 (BSO) as a function of prior
irradiation, and a time‐varying absorption of radiation that is dependent upon prior …

Growth, spectroscopic and photorefractive investigation of vanadium-doped cadmium telluride

JC Launay, V Mazoyer, M Tapiero, JP Zielinger… - Applied Physics A, 1992 - Springer
We present new results on the growth of semi-insulating vanadium-doped cadmium telluride
crystals and their characterization by different optical techniques such as photoinduced …

Introduction, revelation, and evolution of complementary gratings in photorefractive bismuth silicon oxide

MC Bashaw, TP Ma, RC Barker, S Mroczkowski… - Physical Review B, 1990 - APS
Principal and complementary space-charge gratings are formed in photorefractive bismuth
silicon oxide with use of 785-nm light. An electric field is optionally applied in the direction of …

Quasi‐nondestructive readout of holographically stored information in photorefractive Bi12SiO20 crystals

A Delboulbe, C Fromont, JP Herriau, S Mallick… - Applied physics …, 1989 - pubs.aip.org
FIG. 2, Logarithm of the diffraction efficiency (relative values) of the rt'-vca! ed grating at 0· C
as a function of the readout time. The decay during the initial and the final stages is …

Fermi level shift in Bi12SiO20 via photon‐induced trap level occupation

AE Attard - Journal of applied physics, 1992 - pubs.aip.org
Photon‐induced local departures from charge neutrality are the origin of the photorefractive
effect. When a periodic photorefractive grating is stored in the material, one can associate …

Shallow trapping centers in Bi12GeO20 single crystals by thermally stimulated current measurements

S Delice, M Isik, NM Gasanly - Materials Today Communications, 2022 - Elsevier
Bi 12 GeO 20 single crystals were investigated by thermally stimulated current (TSC)
experiments performed in the temperature range of 10–290 K. Recorded TSC glow curve …