The present stage of development for the AlN-GaN-InN class of III-V nitrides is reviewed,
with emphasis on the electronic properties of the materials. We also briefly cover the most …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

The electronic structure of bound excitons in GaN is discussed, with reference to available
optical data. Emphasis is given to the neutral-donor and neutral-acceptor spectra, which are …

Deep luminescence centers in Si associated with transition metals have been studied for
decades, both as markers for these deleterious contaminants, as well as for the possibility of …

In Er-doped silicon we have found direct evidence for the formation of the Er-related
intermediate state that is a precursor of the final 4 f-electron excited state responsible for the …

Recent developments in material properties of GaN and related heterostructure
combinations are reviewed, with emphasis on optical data. We discuss recent polarized …

This chapter gives a brief review of the present knowledge of the optical properties of the
materials, from an experimental perspective. It concentrates on recent work within the areas …

Publisher Summary This chapter discusses the intrinsic optical properties of gallium nitride
(GaN). The optical properties of a semiconductor are connected with both intrinsic and …

In silver-doped silicon, a photoluminescence band is observed with zero-phonon lines at
778.92, 779.85, and 784.31 meV, which is concluded to be associated with the spin-triplet …

The optical-absorption spectrum of a complex neutral defect in silicon with a lowest bound-
exciton line at 615.0 meV has been studied. Only transitions to s-like excited electronic …