Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and
scalability advantages over heterogeneous integration. The challenge is that epitaxial …

The paper analyses theoretically the quenching of the ground state (GS) power observed in
InAs/GaAs quantum dot lasers when emitting simultaneously from both ground state and …

This thesis sheds light on the unique dynamics of optoelectronic devices based on
semiconductor quantum-dots. The complex scattering processes involved in filling the …

Quantum-dot lasers can exhibit simultaneous ground-and excited-state lasing. With
increasing pump current, a quenching of the ground-state lasing intensity is sometimes …

High temperature photoluminescence up to 100 C was demonstrated from the p-doped ten-
layer In As∕ In Ga As quantum dot (QD) laser structure. 1.3 μ m InAs QD lasers were …

In this paper, a self-consistent model comprising of rate equation and thermal conduction
equation, in which all possible pathways are considered, is used to investigate the influence …

A self-consistent model comprising rate equations and thermal conduction equation is used
to analyze the influence of self-heating on the carrier occupation, quantum efficiency, and …

The influence of p-type and n-type doping on the optical characteristics of a quantum-dot
semiconductor optical amplifier (SOA) is studied using a rate equation model that takes into …

High contrast grating (HCG) 1300 nm InAs/GaAs quantum dot (QD) vertical-cavity surface-
emitting laser (VCSEL) has been introduced in this manuscript and the impact of device …

Temperature-dependent modulation characteristics of 1.3 μ m InAs/GaAs quantum dot (QD)
lasers under small signals have been carefully studied at various bias currents. Based on …