Ferroelectric interfacial devices consist of materials systems whose interfacial electronic
properties (such as a 2D electron gas or an interfacial magnetic spin configuration) are …

High-resolution x-ray diffraction and scattering is a key tool for structure analysis not only in
bulk materials but also at surfaces and buried interfaces from the sub-nanometer range to …

Abstract (Ga, Mn) As is a paradigm of a diluted magnetic semiconductor which shows
ferromagnetism induced by doped hole carriers. With a few controversial models emerging …

Efficient magnetic control of electronic conduction is at the heart of spintronic functionality for
memory and logic applications,. Magnets with topological band crossings serve as a good …

Our x-ray photoemission, magnetization, and transport studies on surface-etched and
annealed (Ga, Mn) As epilayers elucidate the key role of the surface oxide in controlling the …

First principles calculations were performed to study the electronic structures of gallium
nitride (GaN) sheets and nanoribbons (NRs) in order to understand the influence of defects …

We have analyzed the structural stability, thermodynamic, elastic and transport properties of
half-metallic ferromagnetic Co 2 MnAs alloy by full-potential linearized augmented plane …

We analyze the origin of ferromagnetism as a result of carrier mediation in diluted magnetic
oxide semiconductors in the light of the experimental evidence reported in the literature. We …

The intrinsically nonmagnetic feature of van der Waals (vdW) layered transition-metal
dichalcogenide (TMDC) semiconductors limits the spintronic applications of these …

We explore the basic physical origins of the noncrystalline and crystalline components of the
anisotropic magnetoresistance (AMR) in (Ga, Mn) As. The sign of the noncrystalline AMR is …