Solid-state reaction pathways of sillenite-phase formation studied by high-temperature X-ray diffractometry and differential thermal analysis
S Chehab, P Conflant, M Drache, JC Boivin… - Materials Research …, 2003 - Elsevier
This paper reports on the use of high-temperature X-ray diffractometry, in conjunction with
differential thermal analysis, to study the solid-state reactions and phase transformations …
differential thermal analysis, to study the solid-state reactions and phase transformations …
Defects in inorganic photorefractive materials and their investigations
B Briat, VG Grachev, GI Malovichko… - … Materials and Their …, 2007 - Springer
The role of defects in the photorefractive effect is known in principle: their photoionization in
the brighter regions of a photorefractive crystal, illuminated by an inhomogeneous light …
the brighter regions of a photorefractive crystal, illuminated by an inhomogeneous light …
Charge transfer mechanisms between some shallow-trap centres involved in the photochromism of Bi12GeO20
H Marquet, JC Merle, JG Gies - Optical Materials, 2000 - Elsevier
Charge transfers between traps in undoped Bi12GeO20 (BGO) crystals have been
investigated so as to complete our previous studies concerning the mechanism of the …
investigated so as to complete our previous studies concerning the mechanism of the …
الخواص الضوئية للبلورة الأحادية Bi40Ga2O60
برهان دالاتي - Tishreen University Journal-Basic Sciences …, 2007 - journal.tishreen.edu.sy
The normal-incidence reflectance spectrum of Bi 40 Ga 2 O 63 single crystal in the energy
range from 1 to 12 eV at room temperature has been measured. Single crystals have been …
range from 1 to 12 eV at room temperature has been measured. Single crystals have been …
Физико-химические основы направленного синтеза монокристаллов силленитов с регулируемыми функциональными характеристиками
АВ Егорышева - 2005 - static.freereferats.ru
Кристаллы со структурой силленита Bii2Ge02o, Bii2Si02o, Bii2Ti02o в ряду материалов,
используемых в оптоэлектронике, характеризуются высокими значениями показателя …
используемых в оптоэлектронике, характеризуются высокими значениями показателя …