Resistive switching effects in oxide sandwiched structures
Resistive switching (RS) behaviors have attracted great interest due to their promising
potential for the data storage. Among various materials, oxide-based devices appear to be …
potential for the data storage. Among various materials, oxide-based devices appear to be …
Design and synthesis of low temperature printed metal oxide memristors
Resistive switching (RS) devices or memristors have received a lot of attention in the last
decade owing to their valuable and interesting properties, such as high-density, switching …
decade owing to their valuable and interesting properties, such as high-density, switching …
Mapping irreversible electrochemical processes on the nanoscale: ionic phenomena in Li ion conductive glass ceramics
A scanning probe microscopy approach for mapping local irreversible electrochemical
processes based on detection of bias-induced frequency shifts of cantilevers in contact with …
processes based on detection of bias-induced frequency shifts of cantilevers in contact with …
In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory
In this letter, we dynamically investigate the resistive switching characteristics and physical
mechanism of the Ni/ZrO 2/Pt device. The device shows stable bipolar resistive switching …
mechanism of the Ni/ZrO 2/Pt device. The device shows stable bipolar resistive switching …
The atomic switch
M Aono, T Hasegawa - Proceedings of the IEEE, 2010 - ieeexplore.ieee.org
An atomic switch is a nanoionic device that controls the diffusion of metal ions and their
reduction/oxidation processes in the switching operation to form/annihilate a metal atomic …
reduction/oxidation processes in the switching operation to form/annihilate a metal atomic …
Conducting Bridge Resistive Switching Behaviors in Cubic MAPbI3, Orthorhombic RbPbI3, and Their Mixtures
Abstract Recently, halide perovskites (HPs), which exhibit resistive switching (RS)
behaviors, are proposed as a promising candidate for next‐generation memory because of …
behaviors, are proposed as a promising candidate for next‐generation memory because of …
Humidity effects on the redox reactions and ionic transport in a Cu/Ta2O5/Pt atomic switch structure
Redox reactions at the Cu/Ta 2 O 5 interface and subsequent Cu ion transport in a Ta 2 O 5
film have been investigated by means of cyclic voltammetry (CV) measurements. Under …
film have been investigated by means of cyclic voltammetry (CV) measurements. Under …
Overbias and Quantum Tunneling in Light-Emitting Memristors
S Hamdad, K Malchow, D Avetisyan, E Dujardin… - Physical Review …, 2023 - APS
A nanoscale dielectric gap clamped between two metal electrodes may undergo a large
resistance change from insulating to highly conducting upon applying an electrical stress …
resistance change from insulating to highly conducting upon applying an electrical stress …
Hybrid oxide brain-inspired neuromorphic devices for hardware implementation of artificial intelligence
J Wang, X Zhuge, F Zhuge - Science and Technology of Advanced …, 2021 - Taylor & Francis
The state-of-the-art artificial intelligence technologies mainly rely on deep learning
algorithms based on conventional computers with classical von Neumann computing …
algorithms based on conventional computers with classical von Neumann computing …
[图书][B] Metal-dielectric interfaces in gigascale electronics: thermal and electrical stability
M He, TM Lu - 2012 - books.google.com
Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale
electronic devices continue to shrink, the stability of these interfaces is becoming an …
electronic devices continue to shrink, the stability of these interfaces is becoming an …