With the emerging trend of big data and internet of things, silicon (Si) photonics technology
has been developed and applied for high‐bandwidth data transmission. Contributed by the …

Silicon (Si) photonics has recently emerged as a key enabling technology in many
application fields thanks to the mature Si process technology, the large silicon wafer size …

Monolithic integration of GaSb-based optoelectronic devices on Si is a promising approach
for achieving a low-cost, compact, and scalable infrared photonics platform. While …

The global trends of urbanization and industrialization have given rise to critical
environmental and air pollution issues that often receive insufficient attention. Among the …

This study presents the growth and characterization of an 8.1 μm-emitting,
InGaAs/AlInAs/InP-based quantum cascade laser (QCL) formed on an InP-on-Si composite …

In order to accelerate the application of quaternary optoelectronic materials in the field of
luminescence, it is crucial to develop new quaternary semiconductor materials with excellent …

Efficient heat dissipation that can minimize temperature increases in device is critical in
realizing electrical injection lasers. High-thermal-conductivity diamonds are promising for …

We report on the realization of an InP-based long wavelength quantum cascade laser grown
on top of a silicon substrate. This demonstration first required the development of an …

This paper presents a conceptual framework for experimental research combined with
numerical analysis on direct current (DC) glow discharges in microscale planar gas …

In recent years, GaSb-on-Si direct heteroepitaxy has been highly desirable to extend the
operating wavelength range into mid-infrared and high-mobility applications, such as free …