Theoretical correlation and effect of annealing on the photoresponse of vertically strain-coupled In0. 5Ga0. 5As/GaAs quantum dot heterostructures
Here, we propose a different approach for growing strain-coupled In 0.5 Ga 0.5 As quantum
dot infrared photodetectors (QDIPs) with varying dot layer periodicity. Strain calculation is …
dot infrared photodetectors (QDIPs) with varying dot layer periodicity. Strain calculation is …
Vertically coupled hybrid InAs sub-monolayer on InAs Stranski–Krastanov quantum dot heterostructure: toward next generation broadband IR detection
In the present article, we are introducing a novel heterogeneously coupled InAs
Submonolayer (SML) on Stranski-Krastanov (SK) quantum dot (QD) heterostructure with …
Submonolayer (SML) on Stranski-Krastanov (SK) quantum dot (QD) heterostructure with …
Strain relaxation in InAs quantum dots through capping layer variation and its impact on the ultrafast carrier dynamics
Ultrafast carrier dynamics is found to be crucial for influencing the efficiency of quantum dot
(QD)-based optoelectronic devices. Here, we have studied picosecond resolved dynamics …
(QD)-based optoelectronic devices. Here, we have studied picosecond resolved dynamics …
Influence of a dual-stabiliser formed by 3-morpholinoethanesulfonic and 3-mercaptopropionic acids on the photophysical, electrochemical and …
RAC Palomino, MA Zon, H Fernández… - Journal of …, 2024 - Elsevier
In order to obtain an emitter nanoprobe for applications in aqueous solutions, we
synthesised quantum dots of CdSe (CdSe QDs) in aqueous solutions, which were stabilised …
synthesised quantum dots of CdSe (CdSe QDs) in aqueous solutions, which were stabilised …
Impact of Sb Composition on Strain Profile of GaAs1-xSbx Capped InAs Quantum Dots
JS Krishna, D Panda… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
A detail theoretical investigation on strain distribution of InAs quantum dot (QD) capped with
GaAs 1-x Sb x has been carried out. The transition from type-I to type-II with varying Sb …
GaAs 1-x Sb x has been carried out. The transition from type-I to type-II with varying Sb …
Atomistic approach to the strain field in finite-sized heterostructures
TO Cheche - Computer Physics Communications, 2023 - Elsevier
The numerical code AS_LBFG_v2 developed to simulate the atomic elastic relaxation in
finite-sized heterostructures is introduced. To minimize the elastic energy the L-BFGS …
finite-sized heterostructures is introduced. To minimize the elastic energy the L-BFGS …
Comparison of parameter variation of InAs quantum dots embedded in GaAs/Al0.30Ga0.70As structures with different capping/buffer quantum wells at annealing
RC Tamayo, TV Torchynska, G Polupan… - Journal of Materials …, 2023 - Springer
The emission variation with annealing in GaAs/Al0. 30Ga0. 70As structures with quantum
dots of InAs (QDs) located in different capping/buffer wells (QWs) is investigated. Two types …
dots of InAs (QDs) located in different capping/buffer wells (QWs) is investigated. Two types …
Strain minimization of InAs QDs heterostructures using dual quaternary-ternary/ternary-quaternary capping materials via digital alloy capping layer approach
The role of combinational (ternary and quaternary) capping layers to understand the strain
distribution mechanism and optical properties through digital alloy capping layer (DACL) …
distribution mechanism and optical properties through digital alloy capping layer (DACL) …
Ultrafast electronic spectroscopy on the coupling of Stranski-Krastanov and submonolayer quantum dots for potential application in near infrared light harvesting
Heterogeneously coupled self-assembled InAs QDs are always attractive to study their
unique physical properties. Here, we have introduced Stranski-Krastanov (SK) grown …
unique physical properties. Here, we have introduced Stranski-Krastanov (SK) grown …
Annealing Impact on Emission of InAs Quantum Dots in GaAs/Al0.30Ga0.70As Structures with Different Capping Layers
TV Torchynska, RC Tamayo, G Polupan… - Journal of Electronic …, 2021 - Springer
The impact of annealing on the emission of InAs quantum dots (QDs) has been investigated
in the GaAs/Al0. 30Ga0. 70As structures with different compositions of the quantum well …
in the GaAs/Al0. 30Ga0. 70As structures with different compositions of the quantum well …