To fully exploit the potential advantages of ideal quantum dots (QDs)(ie full 3D carrier
confinement), elimination of the wetting layer and a uniform monomodal QD size distribution …

We describe the effectiveness of filter layers, which displace misfit dislocation (MD)
formation away from the active region, in improving high temperature reliability of epitaxially …

Temperature-dependent lasing characteristics of transverse single-mode GaAs-based InAs
submonolayer (SML) quantum-dot (QD) lasers are investigated. The SML QD lasers, when …

In this paper, a self-consistent model comprising of rate equation and thermal conduction
equation, in which all possible pathways are considered, is used to investigate the influence …

Abstract Monolithic two-section InGaAs/GaAs double quantum well (DQW) passively mode-
locked lasers (MLLs) with asymmetric waveguide, consisting of the layers of p-doped …

We investigated the effects of rapid thermal annealing (RTA) on the dynamic characteristics
of the InAs/GaAs ten-layer quantum dot (QD) laser. Improvements in the temperature stability …

A self-consistent all-pathway quantum dot (QD) rate equation model, in which all possible
relaxation pathways are considered, is used to investigate the influence of quality (Q) factor …

The modal gain and differential gain of 1.3-μm InAs-GaAs quantum-dot (QD) lasers with
different doping concentrations have been investigated as a function of injection current …

Silicon photonics has over the past decade dramatically expanded in scale and importance
and now plays a key role in optical communications for data centers, with many longer-term …

We investigate the influence of thermal effects on the high-speed performance of 1.3-μm
InAs/GaAs quantum-dot lasers in a wide temperature range (5–50° C). Ridge waveguide …