At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …

We report a complete characterization of InAs x P 1− x/InP (0.05< x< 0.59) superlattices
epitaxially grown by low pressure metalorganic chemical vapor deposition and by chemical …

InP is a key semiconductor for the production of optoelectronic and photonic devices. Its
related compounds, such as InGaAsP alloy, have been realized as very important materials …

This device comprises a resonant cavity (2) delimited by two mirrors (4, 6) and at least one
Super-lattice (14) that is placed in the cavity and is formed from piezoelectric Semiconduct …

InAs x P 1− x/InP quantum wells (QWs) with excellent crystalline and interfacial quality are
grown by metal organic vapor phase epitaxy as confirmed from the cross-sectional …

We report on optical investigations carried out on InAsxP1− x/InP single and multi-quantum
well structures with arsenic compositions of 0.35< x< 0.54 and various well widths grown by …

The thesis deals with the design and fabrication of semiconductor mode-locked lasers for
use in optical communication systems. The properties of pulse sources and characterization …

Strained-layer multiple quantum well (MQW) InAsP/InP optical modulators have been
fabricated from layers grown by metal-organic vapor phase epitaxy. The devices are a series …

The engineering of band lineups becomes a practical method for boosting device
performance as advances in the growth and characterization of IV–IV, III–V, and II–VI …

For a square quantum well QW the quantum confined Stark effect QCSE results in a redshift
of the absorption edge with increasing bias. 1 However, blueshifting multiquantum well …