Efficient wideband mmW transceiver front end for 5G base stations in 22-nm FD-SOI CMOS
C Elgaard, M Özen, E Westesson… - IEEE Journal of Solid …, 2023 - ieeexplore.ieee.org
This article presents a fully integrated millimeter-wave (mmW) transceiver front end covering
24.25–29.5 GHz. It features a wideband Doherty power amplifier utilizing adaptive bias and …
24.25–29.5 GHz. It features a wideband Doherty power amplifier utilizing adaptive bias and …
A 39-GHz phase-inverting variable gain power amplifier in 65-nm CMOS for 5G communication
X Zhang, X Niu, Q Chen, X Chen… - IEEE Microwave and …, 2022 - ieeexplore.ieee.org
This letter presents a 39-GHz phase-inverting variable gain power amplifier (VGPA) for 5G
communication. Adopting a Gilbert structure-based variable gain amplifier (VGA) stage, the …
communication. Adopting a Gilbert structure-based variable gain amplifier (VGA) stage, the …
A 28 GHz and 38 GHz high-gain dual-band power amplifier for 5G wireless systems in 22 nm FD-SOI CMOS
This paper presents a high-gain, dual-band power amplifier for 5G wireless systems, which
supports a simultaneous operation at 28 GHz and 38 GHz. The circuit is based on two …
supports a simultaneous operation at 28 GHz and 38 GHz. The circuit is based on two …
A 24–30-GHz Four-Element Phased Array Transceiver With Low Insertion Loss Compact T/R Switch and Bidirectional Phase Shifter for 5G Communication
This article presents a compact 24–30-GHz four-element phased-array transceiver (TRx)
front-end (FE) for 5-G communications. A compact T/R switch co-designed with power …
front-end (FE) for 5-G communications. A compact T/R switch co-designed with power …
[HTML][HTML] Analysis and design of a GHz bandwidth adaptive bias circuit for an mmW Doherty amplifier
C Elgaard, H Sjöland - Analog Integrated Circuits and Signal Processing, 2024 - Springer
This paper derives theoretical results for adaptive bias in Doherty amplifiers and presents
the design and measurements of an integrated adaptive bias circuit tailored for high peak-to …
the design and measurements of an integrated adaptive bias circuit tailored for high peak-to …
A Millimeter-Wave Variable-Gain Power Amplifier With P₁ dB Improvement Technique in 65-nm CMOS
A millimeter-wave (MMW) variable-gain power amplifier (VGPA) with improvement
technique is proposed. The proposed VGPA consists of a postdistortion power amplifier …
technique is proposed. The proposed VGPA consists of a postdistortion power amplifier …
A 41-GHz 19.4-dBm Psat CMOS Doherty power amplifier for 5G NR applications
In this letter, a 41-GHz Doherty power amplifier (PA) in standard 65 nm CMOS technology is
introduced for 5G New Radio (NR) applications. The proposed PA implements the …
introduced for 5G New Radio (NR) applications. The proposed PA implements the …
Circuits for 5G applications implemented in FD-SOI and RF/PD-SOI technologies
Abstract Silicon-on-insulator (SOI) technology, with its high radio frequency (RF)
performance, high digital density, and high-volume manufacturability, is a serious contender …
performance, high digital density, and high-volume manufacturability, is a serious contender …
Fully Integrated CMOS Wideband Power Amplifier for Fifth Generation Mobile Communications
B Park, HD Lee, S Jang, S Kong… - … on Circuits/Systems …, 2023 - ieeexplore.ieee.org
This paper describes a power amplifier (PA) that performs frequency range 2 (FR2) for fifth
generation mobile networks (5G) using 65nm bulk CMOS devices. The power amplifier with …
generation mobile networks (5G) using 65nm bulk CMOS devices. The power amplifier with …
Ka-Band Dual Input Stacked 22 nm CMOS FDSOI Power Amplifier with Transformer-Based Power Combiner
J Rusanen, N Tervo, T Rahkonen… - 2020 15th European …, 2021 - ieeexplore.ieee.org
A Ka-band dual input, three stack power amplifier (PA) is designed and fabricated using
22nm CMOS FDSOI. The PA output matching is implemented with a transformer-based …
22nm CMOS FDSOI. The PA output matching is implemented with a transformer-based …