Group III-V semiconductors as promising nonlinear integrated photonic platforms
Group III–V semiconductors are based on the elements of groups III and V of the periodic
table. The possibility to grow thin-films made of binary, ternary, and quaternary III–V alloys …
table. The possibility to grow thin-films made of binary, ternary, and quaternary III–V alloys …
AlGaAs nonlinear integrated photonics
Practical applications implementing integrated photonic circuits can benefit from nonlinear
optical functionalities such as wavelength conversion, all-optical signal processing, and …
optical functionalities such as wavelength conversion, all-optical signal processing, and …
Post-2000 nonlinear optical materials and measurements: data tables and best practices
In its 60 years of existence, the field of nonlinear optics has gained momentum especially
over the past two decades thanks to major breakthroughs in material science and …
over the past two decades thanks to major breakthroughs in material science and …
Relaxed phase-matching constraints in zero-index waveguides
The utility of all parametric nonlinear optical processes is hampered by phase-matching
requirements. Quasi-phase-matching, birefringent phase matching, and higher-order-mode …
requirements. Quasi-phase-matching, birefringent phase matching, and higher-order-mode …
Mid-infrared difference-frequency generation in AlGaAs-on-insulator waveguides
A design study is presented for difference-frequency generation (DFG) to the mid-infrared
(MIR) at 2.3 µm in AlGaAs waveguides heterogeneously integrated on silicon. Perfect phase …
(MIR) at 2.3 µm in AlGaAs waveguides heterogeneously integrated on silicon. Perfect phase …
[HTML][HTML] Suspended AlGaAs waveguide for integrated nonlinear photonics
Al x Ga 1-x As compound is one of the promising platforms to realize high performance
nonlinear optical devices, which provide ultra-high third order nonlinearity and negligible …
nonlinear optical devices, which provide ultra-high third order nonlinearity and negligible …
Geometry-dependent two-photon absorption followed by free-carrier absorption in AlGaAs waveguides
Nonlinear absorption can limit the efficiency of nonlinear optical devices. However, it can
also be exploited for optical limiting or switching applications. Thus, characterization of …
also be exploited for optical limiting or switching applications. Thus, characterization of …
Systematic study of InP/InGaAsP heated plasma etching and roughness improvement for integrated optical devices
Indium Phosphide (InP) is one of the most widely commercialized III–V semiconductor
materials for making efficient lasers operating in the O-band and C-band. It is also gaining …
materials for making efficient lasers operating in the O-band and C-band. It is also gaining …
Mechanisms of Enhancement of Nonlinear Optical Interactions in Nonlinear Photonic Devices Based on III-V Semiconductors
E Mobini - 2022 - ruor.uottawa.ca
The family of III-V semiconductors is of high significance in photonics for two main reasons.
First, not only they are the most practical material platforms for active photonic devices but …
First, not only they are the most practical material platforms for active photonic devices but …
Challenges associated with fabrication of III-V integrated optical nanostructures for nonlinear optics
K Vyas, K Dolgaleva - Nonlinear Photonics, 2022 - opg.optica.org
III-V semiconductors are elements formed using the group III and group V of the periodic
table. These materials are known for their large nonlinear properties. Fabrication of …
table. These materials are known for their large nonlinear properties. Fabrication of …