Synthesis and surface engineering of inorganic nanomaterials based on microfluidic technology

J Shen, M Shafiq, M Ma, H Chen - Nanomaterials, 2020 - mdpi.com
The controlled synthesis and surface engineering of inorganic nanomaterials hold great
promise for the design of functional nanoparticles for a variety of applications, such as drug …

Characterization of nonradiative recombination centers in proton-irradiated InAs/GaAs quantum dots by two-wavelength-excited photoluminescence

MD Haque, N Kamata, S Sato… - Japanese Journal of …, 2018 - iopscience.iop.org
Nonradiative recombination (NRR) centers in as-grown and proton-irradiated InAs/GaAs
quantum dot (QD) structures have been studied by two-wavelength-excited …

The Influence of Technological Factors on Photoconverters Electrophysical Characteristics

AA Nikonova, OY Nebesniuk, ZA Nikonova - 2020 - essuir.sumdu.edu.ua
Solar energy represents a sensible alternative to the use of thermal, chemical and nuclear
power sources. Solar radiation can satisfy the growing needs of humanity with its energetic …

Technological Aspects of Formation of Energy-efficient Photovoltaic Solar Energy Converters

OY Nebesniuk, ZA Nikonova, AA Nikonova - 2021 - essuir.sumdu.edu.ua
Nowadays there is an increasing demand for alternative energy sources used in the national
economy, industry and everyday life. Solar energy is one of the most promising alternatives …

[PDF][PDF] КОНСТРУКТИВНО–ТЕХНОЛОГІЧНІ РІШЕННЯ ВИГОТОВЛЕННЯ ЕНЕРГОЕФЕКТИВНИХ ФОТОПЕРЕТВОРЮВАЧІВ

АО Ніконова, ОЮ Небеснюк, ЗА Ніконова - visnikkrnu.kdu.edu.ua
Сонячна енергетика представляє розумну альтернативу використанню теплових,
хімічних та ядерних джерел струму. За своїм енергетичним ресурсом сонячне …

Improvement in NEDT characteristics of InAs/GaAs quantum dot based 320x256 focal plane array implanted with hydrogen ions

S Upadhyay, DP Panda, D Das… - Infrared Technology …, 2018 - spiedigitallibrary.org
In this work, we demonstrate two times enhancement in NEDT response of
InAs/InGaAs/GaAs dot-in-the-well (DWELL) structure implanted with hydrogen ions of 3 MeV …

Comparative Study on Nonradiative Recombination Centers in Proton Irradiated InAs/GaAs Quantum Dot Structure by Two Wavelength Excited Photoluminescence

MD Haque, N Kamata, SI Sato… - 2017 IEEE 44th …, 2017 - ieeexplore.ieee.org
Comparative study on nonradiative recombination (NRR) centers in InAs/GaAs quantum dot
(QD) structure generated by 3 MeV proton irradiation is performed by two wavelength …