Molybdenum disulfide (MoS2) has attracted great attention from researchers because of its
large band gap, good mechanical toughness and stable physical properties; it has become …

Printing technology will improve the complexity and material waste of traditional deposition
and lithography processes in device fabrication. In particular, the printing process can …

The property of Si-doped ZnSnO (SiZTO) thin film, thin-film transistor (TFT), and associated
CMOS inverter has been optimized by Si doping. Under positive voltage and light negative …

In this study, the influence of air annealing on nanometer-thin indium tin oxide (ITO)
transistors was investigated. Compared with unannealed devices, the field-effect mobility …

Two-dimensional metal oxides can be classified into two groups based on their crystal
structure: layered and non-layered. Non-layered two-dimensional (2D) metal oxides have …

Widegap metal oxides are critical semiconducting materials in solar power generation,
transparent electronics and displays. Ultrathin versions of these materials are poised to be at …

In recent years, there has been significant attention directed towards field-effect transistors
based on ultra-thin oxide semiconductors. In this study, we conducted an investigation into …

We present a rapid liquid metal printing process (CLMP) enabling fabrication of high-
mobility metal oxide semiconducting channels in less than 3 seconds. We use this process …

Abstract 2D conducting metal oxides offer unprecedented control of thin film electrostatics at
the nanoscale. We present a scalable, rapid, and low-cost approach to printing transparent …