Size quantization and zero dimensional effects in self assembled semiconductor quantum dots
PM Petroff, KHS Ribeiro… - Japanese journal of …, 1997 - iopscience.iop.org
In this paper we discuss size quantization effects in InAs self assembled quantum dots
deposited by molecular beam epitaxy (MBE) on (100) GaAs. The quantum dot size …
deposited by molecular beam epitaxy (MBE) on (100) GaAs. The quantum dot size …
Pressure-induced energy level crossings and narrowing of photoluminescence linewidth in self-assembled InAlAs/AlGaAs quantum dots
J Phillips, PK Bhattacharya, U Venkateswaran - 1999 - pubs.aip.org
We present a study of the hydrostatic-pressure dependence of the photoluminescence from
In0. 5Al0. 5As/Al0. 25Ga0. 75As self-assembled quantum dots. Three distinct regions of …
In0. 5Al0. 5As/Al0. 25Ga0. 75As self-assembled quantum dots. Three distinct regions of …
In situ transmission electron microscopy observations of the formation of self‐assembled Ge islands on Si
The in situ transmission electron microscope allows us to visualise processes occurring at
surfaces and interfaces in real time and is therefore capable of providing detailed …
surfaces and interfaces in real time and is therefore capable of providing detailed …
Self-organized quantum dots
AR Woll, P Rugheimer, MG Lagally - International journal of high …, 2002 - World Scientific
We review the concepts and principal experimental results pertaining to the self-assembly
and self-ordering of quantum dots in semiconductor systems. We focus on the kinetics and …
and self-ordering of quantum dots in semiconductor systems. We focus on the kinetics and …
[PDF][PDF] 透镜型量子点中类氢杂质基态能的计算
常加峰， 曾祥华， 周朋霞， 毕桥 - 2004 - wulixb.iphy.ac.cn
通过有效质量近似和变分法, 研究了垂直磁场下透镜型量子点中类氢杂质基态能量,
并与球型量子点进行了比较. 研究表明: 对于球型量子点, 基态能仅与杂质的偏离距离有关 …
并与球型量子点进行了比较. 研究表明: 对于球型量子点, 基态能仅与杂质的偏离距离有关 …
Exploiting the difference in lattice structures for formation of self-assembled PbS dots on InP (110)
AB Preobrajenski, K Barucki, T Chassé - Physical Review Letters, 2000 - APS
Via the example of PbS self-assembled nanodots on InP (110) we show that spontaneous
self-organization at semiconductor interfaces can be achieved due to different lattice …
self-organization at semiconductor interfaces can be achieved due to different lattice …
Tuning of electronic states in self-assembled InAs quantum dots using an ion implantation technique
PJ Wellmann, WV Schoenfeld, JM Garcia… - Journal of electronic …, 1998 - Springer
We report the tunability of up to 150 meV of the ground state transition of self-assembled
InAs quantum dots (QDs) using Mn ion implantation and subsequent annealing. Because of …
InAs quantum dots (QDs) using Mn ion implantation and subsequent annealing. Because of …
Numerical and experimental investigations of the size ordering of nanocrystals
L Haderbache, R Garrigos, R Kofman, E Søndergard… - Surface science, 1998 - Elsevier
The nucleation and growth of particles on the 1–100nm length scale is a phenomenon of
increasing interest in the areas of electronics and optoelectronics. Dealing with the …
increasing interest in the areas of electronics and optoelectronics. Dealing with the …
Effects of growth conditions on the size and density of self-assembled InAlAs/AlGaAs quantum dots grown on GaAs by molecular beam epitaxy
XM Lu, Y Izumi, M Koyama, Y Nakata, S Adachi… - Journal of crystal …, 2011 - Elsevier
The effects of growth conditions on the size and density of self-assembled InAlAs/AlGaAs
quantum dots (QDs) grown on GaAs by molecular beam epitaxy (MBE) were studied with an …
quantum dots (QDs) grown on GaAs by molecular beam epitaxy (MBE) were studied with an …
Red luminescence from strain‐induced GaInP quantum dots
M Sopanen, M Taskinen, H Lipsanen… - Applied physics …, 1996 - pubs.aip.org
The strain of self‐organized InP islands is used to induced quantum dots in near‐surface
GaInP/AlGaInP quantum wells. To obtain quantum dot luminescence in a widely tunable …
GaInP/AlGaInP quantum wells. To obtain quantum dot luminescence in a widely tunable …