InN nanowires were grown on Si (111) substrates by plasma-assisted molecular beam
epitaxy. Raman spectroscopy showed that the nanowires were strain-free and allowed the …

It is shown that dispersions of E 1 (LO) and A 1 (LO) modes of InN can be restored in a wide
interval of wave vectors by studying impurity-induced first-order Raman scattering as a …

In the literature, there are controversies on the interpretation of the appearance in InN
Raman spectra of a strong scattering peak in the energy region of the unscreened …

For the first time, high optical quality InN films were grown on a sapphire substrate using the
atmospheric chemical vapour deposition technique in the temperature range of 560–650° C …

Phonon-plasmon-coupling in the ternary group-III-nitrides InGaN and AlGaN is investigated
experimentally and theoretically. Based on the observation of broadening and shifting of the …

Photoacoustic (PA) measurements have been performed on a series of In x Ga 1− x N thin
films grown with x> 50%. In order to illustrate the usefulness of this technique, these …

Raman scattering from coupled plasmon–longitudinal optical (LO) phonon modes in polar
semiconductors is an effective tool to determine electronic properties, such as carrier …

In the present article, we focus our discussion on the carrier dynamics of the scattering and
recombination processes of InN films and the related band-edge energy structure. Various …

We investigate the influence of a low-growth-rate InN buffer layer on structural and optical
properties of wurtzite nanocrystalline InN films deposited on Si (111) substrates by reactive …

This work, motivated by the technologically important task of determination of carbon dopant
location in the GaN crystal lattice, employed Raman spectroscopy, with both resonant and …