Raman scattering study of background electron density in InN: a hydrodynamical approach to the LO-phonon–plasmon coupled modes
R Cuscó, E Alarcón-Lladó, J Ibáñez… - Journal of physics …, 2009 - iopscience.iop.org
We use a hydrodynamical approach to analyse the long-wavelength LO-phonon–plasmon
coupled modes observed in a set of high-quality MBE-grown InN epilayers with electron …
coupled modes observed in a set of high-quality MBE-grown InN epilayers with electron …
Sputtered growth of high mobility InN thin films on different substrates using Cu-ZnO buffer layer
This work reports the growth of c-plane textured InN thin films on Cu-ZnO buffered silicon, c-
sapphire, bulk GaN and quartz substrates. A Cu-ZnO buffer layer was deposited on all the …
sapphire, bulk GaN and quartz substrates. A Cu-ZnO buffer layer was deposited on all the …
Auger recombination as the dominant nonradiative recombination channel in InN
YJ Cho, X Lue, M Wienold, M Ramsteiner… - Physical Review B …, 2013 - APS
We investigate the dependence of the photoluminescence intensity of degenerately doped
(6× 10 17-to 1× 10 20-cm− 3) InN films on their threading dislocation density and …
(6× 10 17-to 1× 10 20-cm− 3) InN films on their threading dislocation density and …
High-pressure Raman scattering in wurtzite indium nitride
We perform Raman-scattering measurements at high hydrostatic pressures on c-face and a-
face InN layers to investigate the high-pressure behavior of the zone-center optical phonons …
face InN layers to investigate the high-pressure behavior of the zone-center optical phonons …
Raman scattering by LO-phonon–plasmon coupled modes in : Role of Landau damping
R Cuscó, E Alarcón-Lladó, L Artús, WS Hurst… - Physical Review B …, 2010 - APS
We present a detailed investigation of the phonons and longitudinal-optical-phonon–
plasmon coupled modes in the Ga 1− x In x As y Sb 1− y alloy by means of Raman …
plasmon coupled modes in the Ga 1− x In x As y Sb 1− y alloy by means of Raman …
Photoexcited carriers and surface recombination velocity in InN epilayers: A Raman scattering study
The effect of photoexcited electron-hole pairs on the LO-phonon-plasmon coupled modes
has been observed in InN layers by means of micro-Raman experiments performed at …
has been observed in InN layers by means of micro-Raman experiments performed at …
Confocal Raman depth-scanning spectroscopic study of phonon− plasmon modes in GaN epilayers
VV Strelchuk, VP Bryksa, KA Avramenko… - Journal of Applied …, 2011 - pubs.aip.org
Coupled longitudinal-optical (LO)-phonon-plasmon excitations were studied using confocal
micro-Raman spectroscopy. The high-quality Si-doped GaN epilayers were grown in a Gunn …
micro-Raman spectroscopy. The high-quality Si-doped GaN epilayers were grown in a Gunn …
Properties of uniform diameter InN nanowires obtained under Si doping
T Gotschke, EO Schäfer-Nolte, R Caterino… - …, 2011 - iopscience.iop.org
High quality, well-separated, homogeneous sizes and high aspect ratio Si-doped InN
nanowires (NWs) were grown by catalyst-free molecular beam epitaxy (MBE) after …
nanowires (NWs) were grown by catalyst-free molecular beam epitaxy (MBE) after …
High-pressure optical absorption in InN: Electron density dependence in the wurtzite phase and reevaluation of the indirect band gap of rocksalt InN
We report on high-pressure optical absorption measurements on InN epilayers with a range
of free-electron concentrations (5× 10 17–1.6× 10 19 cm− 3) to investigate the effect of free …
of free-electron concentrations (5× 10 17–1.6× 10 19 cm− 3) to investigate the effect of free …
Resonant raman scattering and dispersion of polar optical and acoustic phonons in hexagonal inn
VY Davydov, AA Klochikhin, AN Smirnov… - Semiconductors, 2010 - Springer
It is shown that a study of the dependence of impurity-related resonant first-order Raman
scattering on the frequency of excitation light makes it possible to observe the dispersion of …
scattering on the frequency of excitation light makes it possible to observe the dispersion of …