This contribution presents results on the structural and optoelectronic properties of InN
layers grown on AlN/sapphire (0001) templates by Migration-Enhanced Plasma Assisted …

Large InN microcrystals grown by molecular beam epitaxy are investigated by micro-Raman
spectroscopy and electron backscatter diffraction (EBSD). High-quality (phonon linewidths …

We study the Raman scattering of n-type InN films grown by molecular beam epitaxy on ZnO
substrates. The observed spectral Raman features are found to strongly depend on the …

Room temperature polarized infrared reflectance technique is employed to study the optical
properties of wurtzite InN epilayers on Si (111) grown by molecular beam expitaxy. The …

We perform visible and ultraviolet (UV) Raman-scattering experiments to study a series of
undoped and Mn-doped c-GaN thin films grown by plasma-assisted molecular beam epitaxy …

We study the excitation wavelength dependence of the Raman spectra of InN nanowires.
The E_1(\rmLO) phonon mode, which is detected in backscattering configuration because of …

We have estimated the longitudinal effective mass (m‖) of electron in n‐type InN films by
Raman scattering. The samples were grown by MOVPE (metal organic vapor phase epitaxy) …

We present a Raman scattering study of the anharmonic phonon decay of the ${E} _
{2}^{\mathrm {low}} $, ${E} _ {2}^{\mathrm {high}} $ and E 1 (LO) phonons in InN nanowires …

The influences of reactor pressure on the stoichiometry, free carrier concentration, IR and
Hall determined mobility, effective optical band edge, and optical phonon modes of HPCVD …

In dieser Arbeit wurden neue Wege zur experimentellen Bestimmung der optischen
Eigenschaften von InN und seinen In-reichen Mischkristallen mit GaN und AlN sowie zur …