Raman spectroscopy of compound semiconductors
J Ibánez, R Cuscó - Semiconductor Research: Experimental Techniques, 2012 - Springer
Raman spectroscopy has become a widely used characterization tool in today's
semiconductor research. In this chapter, we provide an introductory background to the …
semiconductor research. In this chapter, we provide an introductory background to the …
Angular-dependent Raman study of a-and s-plane InN
K Filintoglou, M Katsikini, J Arvanitidis… - Journal of Applied …, 2015 - pubs.aip.org
Angular-dependent polarized Raman spectroscopy was utilized to study nonpolar a-plane
( 1 1 20) and semipolar s-plane ( 10 1 1) InN epilayers. The intensity dependence of …
( 1 1 20) and semipolar s-plane ( 10 1 1) InN epilayers. The intensity dependence of …
Raman Spectroscopy
J Jimenez, JW Tomm, J Jimenez, JW Tomm - Spectroscopic Analysis of …, 2016 - Springer
Deals with lattice vibrations studied by Raman spectroscopy. First, a description of the
fundamentals of this technique is provided. Special emphasis is paid to a detailed …
fundamentals of this technique is provided. Special emphasis is paid to a detailed …
Depth profiling of strain and carrier concentration by cleaved surface scanning of GaN Gunn-diode: confocal Raman microscopy
Confocal micro-Raman spectroscopy was applied to study the cleaved surface of vertical
GaN Gunn-diode structure grown by molecular-beam epitaxy. The analysis of lateral …
GaN Gunn-diode structure grown by molecular-beam epitaxy. The analysis of lateral …
Untersuchungen zum geordneten Wachstum von III-Nitrid Nanodrähten–Analyse der Nukleations-, Dekompositions-und Diffusionsmechanismen
T Gotschke - 2012 - oa.tib.eu
The influence of the Si-and Mg-doping of InN NWs as well as the selective area growth
(SAG) of GaN NWs on Si substrates is developed, optimized and analyzed to obtain NWs …
(SAG) of GaN NWs on Si substrates is developed, optimized and analyzed to obtain NWs …
Electron density gradients in ammonothermally grown Si-doped GaN
R Cuscó, N Domènech-Amador… - Applied Physics …, 2014 - iopscience.iop.org
Charge homogeneity in heavily Si-doped ammonothermal GaN has been studied by
confocal micro-Raman measurements. The polarized Raman spectra indicate a high …
confocal micro-Raman measurements. The polarized Raman spectra indicate a high …
Influence of rapid thermal annealing on Raman scattering of InN epilayers
MD Yang, SC Tong, IT Chou, GW Shu… - Japanese Journal of …, 2010 - iopscience.iop.org
We studied the Raman scattering of the InN epilayers with rapid thermal annealing (RTA).
The longitudianl optical (LO) phonon in Raman spectrum shifts toward lower frequency and …
The longitudianl optical (LO) phonon in Raman spectrum shifts toward lower frequency and …
Optoelectronic and Structural Properties of Group III-Nitride Semiconductors Grown by High Pressure MOCVD and Migration Enhanced Plasma Assisted MOCVD
I Matara Kankanamge - 2016 - scholarworks.gsu.edu
The objective of this dissertation is to understand the structural and optoelectronic properties
of group III-nitride materials grown by High-Pressure Metal Organic Chemical Vapor …
of group III-nitride materials grown by High-Pressure Metal Organic Chemical Vapor …
Фотолюминесценция тонких пленок InN, осажденных методом молекулярно-лучевой эпитаксии
ВД Живулько, АВ Мудрый - 2014 - elib.bsu.by
В настоящей работе исследования фотолюминесценции (ФЛ) проводились на тонких
пленках InN, осажденных на сапфировые подложки с использованием метода …
пленках InN, осажденных на сапфировые подложки с использованием метода …
Self assembled InN quantum structures in Si₃ N₄ films produced by flash lamp processing
S Prucnal, M Turek, K Pyszniak, A Droździel… - Elektronika: konstrukcje …, 2011 - infona.pl
The InN quantum structures were formed in Si₃ N₄ films by indium ion implantation and
subsequent thermal annealing. The µ-Raman spectrum shows peaks at 495 and 592 …
subsequent thermal annealing. The µ-Raman spectrum shows peaks at 495 and 592 …