During the past few decades, silicon carbide (SiC) has emerged as the most promising wide-
bandgap semiconductor for high-temperature, high-frequency, and high-power applications …

Ion implantation induced damage formation and subsequent annealing in 4H–SiC in the
temperature range of 100–800° C has been investigated. Silicon Carbide was implanted at …

In this paper, an investigation into the crystal structure of Al-and N-implanted 4H-SiC is
presented, encompassing a range of physical and electrical analysis techniques, with the …

Abstract C-terminated 6H-SiC (0001) single crystal substrates implanted with Pd ions with
an energy of 20 keV and three fluences of 5× 10 15, 5× 10 16 and 5× 10 17 ions/cm 2 at …

Electronic components, based on current semiconductor technologies and operating in
radiation rich environments, suffer degradation of their performance as a result of radiation …

The availability of two-dimensional (2-D) dopant profiling techniques to Silicon Carbide
(SiC) pn junction is discussed. We compared the results of scanning capacitance …

Degradation of 4H-SiC power bipolar junction transistors (BJTs) under the influence of a
high-energy helium ion beam was studied. Epitaxially grown npn BJTs were implanted with …

Résumé L'implantation ionique est un des seuls moyens pour réaliser un dopage localisé
dans le carbure de silicium (SiC). Dans cet article, nous avons caractérisé le dopage du 3C …