The pulsed inductively coupled plasma (ICP) has considerable potential to satisfy multiple
stringent scaling requirements for use in the semiconductor industry. However, overshoot of …

Pulsed inductively coupled plasmas (ICPs) are widely deployed in the fabrication of
semiconductor devices. Pulse repetition frequencies of up to tens of kHz are commonly used …

The ion flux and ion velocity distribution function are studied using a capacitively coupled
radio frequency ion flux probe and a multigrid retarding field analyzer in an HBr/O 2 pulsed …

The 2D numerical model of the ion current collection by a planar probe has been developed
on the basis of a particle in cell with the Monte Carlo collision method for ion motion. This …

Si 3 N 4 spacer etching processes are one of the most critical steps of transistor fabrication
technologies since they must be at the same time very anisotropic to generate straight …

The effects of low-energy (< 15 eV) high-flux O 2+ ion bombardment on the properties of Al 2
O 3 films deposited on 3D nanostructures by plasma-enhanced atomic layer deposition (PE …

Pulsed plasmas are promising candidates to go beyond limitations of continuous waves'
plasma. However, their interaction with surfaces remains poorly understood. The authors …

A newly developed spectroscopic system based on linear photodiodes array has been
installed on upgraded Glass Spherical Tokamak (GLAST-III) for spatial as well as temporal …

Pulse inductively coupled plasma has been widely used in the microelectronics industry, but
the existence of overshoot phenomenon may affect the uniformity of plasma and generate …

The electron energies and its distribution function are measured in non-equilibrium transient
pulsed microwave plasmas in the interpulse regime using a retarding field electron energy …