Low-frequency noise in nanowires
DM Fleetwood - Nanoscale, 2023 - pubs.rsc.org
40 years of research on low-frequency (LF) noise and random-telegraph noise (RTN) in
metallic and semiconducting nanowires (NWs) demonstrate the importance of defects and …
metallic and semiconducting nanowires (NWs) demonstrate the importance of defects and …
Interface traps, correlated mobility fluctuations, and low-frequency noise in metal–oxide–semiconductor transistors
DM Fleetwood - Applied Physics Letters, 2023 - pubs.aip.org
Interface traps generally are not considered to be likely sources of low-frequency (LF) noise
and/or random telegraph noise (RTN) in metal–oxide–semiconductor (MOS) devices …
and/or random telegraph noise (RTN) in metal–oxide–semiconductor (MOS) devices …
DC response, low-frequency noise, and TID-induced mechanisms in 16-nm FinFETs for high-energy physics experiments
S Bonaldo, T Ma, S Mattiazzo, A Baschirotto… - Nuclear Instruments and …, 2022 - Elsevier
Abstract Total-ionizing-dose (TID) mechanisms are evaluated in 16 nm Si bulk FinFETs at
doses up to 1 Grad (SiO 2) for applications in high-energy physics experiments. The TID …
doses up to 1 Grad (SiO 2) for applications in high-energy physics experiments. The TID …
Random telegraph noise in nanometer-scale CMOS transistors exposed to ionizing radiation
S Bonaldo, DM Fleetwood - Applied Physics Letters, 2023 - pubs.aip.org
Nanometer-scale transistors often exhibit random telegraph noise (RTN) with high device-to-
device variability. Recent experiments up to Grad total ionizing dose (TID) demonstrate …
device variability. Recent experiments up to Grad total ionizing dose (TID) demonstrate …
TID effects in highly scaled gate-all-around Si nanowire CMOS transistors irradiated to ultrahigh doses
Total-ionizing-dose (TID) effects are investigated in a highly-scaled gate-all-around (GAA)
FET technology using Si nanowire channels with a diameter of 8 nm. n-and p-FETs are …
FET technology using Si nanowire channels with a diameter of 8 nm. n-and p-FETs are …
Effects of interface traps and hydrogen on the low-frequency noise of irradiated MOS devices
A re-evaluation of experimental results within the context of first-principles calculations
strongly suggests that interface traps can contribute significantly to low-frequency (1/) noise …
strongly suggests that interface traps can contribute significantly to low-frequency (1/) noise …
Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices
DM Fleetwood - Applied Physics Letters, 2022 - pubs.aip.org
This article provides a brief overview and perspective on the radiation response of
nanoscale metal–oxide–semiconductor (MOS) devices. MOS total-ionizing-dose (TID) …
nanoscale metal–oxide–semiconductor (MOS) devices. MOS total-ionizing-dose (TID) …
Influence of fin and finger number on TID degradation of 16-nm bulk FinFETs irradiated to ultrahigh doses
T Ma, S Bonaldo, S Mattiazzo… - … on Nuclear Science, 2021 - ieeexplore.ieee.org
This article investigates the fin-and finger-number dependence of the total ionizing dose
(TID) degradation in 16-nm bulk Si FinFETs at ultrahigh doses. n-and p-FinFETs designed …
(TID) degradation in 16-nm bulk Si FinFETs at ultrahigh doses. n-and p-FinFETs designed …
Evidence of transport degradation in 22 nm FD-SOI charge trapping transistors for neural network applications
This article reports on the characterization and analysis of 22 nm FD-SOI CMOS technology-
based charge trap transistors (CTT) and their application in neural networks. The working …
based charge trap transistors (CTT) and their application in neural networks. The working …
Negative bias-temperature instabilities and low-frequency noise in Ge FinFETs
Negative bias-temperature instabilities and low-frequency noise are investigated in strained
Ge MOS FinFETs with SiO textsubscript 2/HfO textsubscript 2 gate dielectrics. The extracted …
Ge MOS FinFETs with SiO textsubscript 2/HfO textsubscript 2 gate dielectrics. The extracted …